PHILIPS BGY205

DISCRETE SEMICONDUCTORS
DATA SHEET
BGY205
UHF amplifier module
Product specification
Supersedes data of May 1994
1996 May 21
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
FEATURES
PINNING - SOT321B
• 6 V nominal supply voltage
PIN
• 3.5 W pulsed output power
1
RF input
• Easy control of output power by DC voltage.
2
VC
3
VS
4
RF output
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
Flange
ground
DESCRIPTION
The BGY205 is a four-stage UHF amplifier module in a
SOT321B package. The module consists of four NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
1
2
3
4
Top view
MSA489
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
(MHz)
VS
(V)
VC
(V)
PL
(W)
Gp
(dB)
η
(%)
ZS; ZL
(Ω)
Pulsed; δ = 1 : 8
880 to 915
6
≤4
3.5
≥32.5
≥40
50
1996 May 21
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS
DC supply voltage
−
8.5
V
VC
DC control voltage
−
4.5
V
PD
input drive power
−
7
mW
PL
load power
−
4
W
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−30
+100
°C
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; VC ≤ 4 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IQ
leakage current
VC = 0.5 V
−
−
100
µA
IC
control current
adjust VC for PL = 3.5 W
−
−
500
µA
PL
load power
VC = 4 V
3.5
−
−
W
Gp
power gain
adjust VC for PL = 3.5 W
32.5
−
−
dB
η
efficiency
adjust VC for PL = 3.5 W
40
45
−
%
H2
second harmonic
adjust VC for PL = 3.5 W
−
−
−40
dBc
H3
third harmonic
adjust VC for PL = 3.5 W
−
−
−40
dBc
VSWRin
input VSWR
adjust VC for PL = 3.5 W
−
−
2:1
stability
PD = 0 to 6 dBm; VS = 5 to 8.5 V;
VC = 0 to 4 V; PL ≤ 3.5 W;
VSWR ≤ 6 : 1 through all phases
−
−
−60
dBc
isolation
VC = 0.5 V
−
−
−36
dBm
control bandwidth
R1 = 0; C1 = 0; see Fig.16
1
−
−
MHz
AM-AM conversion
PD with 3% AM; f = 100 kHz;
PL = 3.5 mW to 3.5 W
−
−
12
%
noise power
PL = 3.5 W; bandwidth = 30 kHz;
20 MHz above transmitter band
−
−
−85
dBm
ruggedness
VS = 8.5 V; adjust VC for PL = 3.5 W;
VSWR ≤ 10 : 1 through all phases
Pn
1996 May 21
3
no degradation
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG742
MBG741
40
PL
(dBm)
30
40
handbook, halfpage
PL
(dBm)
30
880 MHz
880 MHz
915 MHz
20
915 MHz
10
20
0
10
−10
0
2.5
2.7
2.9
3.1
3.3
−20
−20
3.5
VC (V)
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.2
−10
−5
0
5
PD (dBm)
ZS = ZL = 50 Ω; VS = 6 V; PL = 3.5 mW;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Load power as a function of control voltage;
typical values.
Fig.3
Load power as a function of drive power;
typical values.
MBG740
12
MBG739
50
handbook, halfpage
output amplitude modulation (%)
−15
handbook, halfpage
η
(%)
10
915 MHz
40
890 MHz
8
6
30
880 MHz
4
20
915 MHz
2
0
0
10
20
30
PL (dBm)
10
40
0
Output amplitude modulation as a
function of load power; typical values.
1996 May 21
2
3
P L (W)
4
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; Tmb = 25 °C;
δ = 1 : 8; tp = 575 µs; input amplitude modulation = 3%.
Fig.4
1
Fig.5
4
Efficiency as a function of load power;
typical values.
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG735
MBG736
5
5
handbook, halfpage
handbook, halfpage
VC
(V)
PL
(W)
4
4
3
3
2
2
1
1
0
880
890
900
910
f (MHz)
0
880
920
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
VC = 4 V; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.6
890
900
910
f (MHz)
920
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
PL = 3.5 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Load power as a function of frequency;
typical values.
Fig.7
Control voltage as a function of
frequency; typical values.
MBG738
30
H 2 , H3
MBG734
10
handbook, halfpage
phase
(deg)
(dBc)
40
−10
H2
50
H3
−30
60
−50
70
80
880
890
900
910
f (MHz)
−70
920
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
PL = 3.5 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.8
1996 May 21
0
1
2
f (MHz)
3
ZS = ZL= 50 Ω; PD = 3 dBm; VS = 6 V; PL = 15 to 35.4 dBm;
f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Harmonics as a function of
frequency; typical values.
Fig.9
5
Control loop phase as a function of
frequency on the control pin; typical values.
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG730
25
MBG731
25
handbook, halfpage
handbook, halfpage
Gv
Gv
20
20
915 MHz
915 MHz
15
15
880 MHz
880 MHz
10
10
5
5
0
0
0
1
2
3
f (MHz) 4
0
2
3
f (MHz) 4
PL = 25 dBm.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
PL = 30 dBm.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Fig.10 Control loop voltage gain as a function of
frequency on the control pin; typical values.
Fig.11 Control loop voltage gain as a function of
frequency on the control pin; typical values.
MBG729
25
1
MBG728
25
handbook, halfpage
handbook, halfpage
Gv
Gv
20
20
915 MHz
15
15
915 MHz
880 MHz
10
10
880 MHz
5
5
0
0
0
1
2
3
f (MHz) 4
0
PL = 20 dBm.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
2
3
f (MHz) 4
PL = 15 dBm.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Fig.12 Control loop voltage gain as a function of
frequency on the control pin; typical values.
1996 May 21
1
Fig.13 Control loop voltage gain as a function of
frequency on the control pin; typical values.
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG732
MBG733
4
4
handbook, halfpage
handbook, halfpage
VC
(V)
VC
(V)
3.5
3.5
PL = 35.4 dBm
PL = 35.4 dBm
3
3
30 dBm
30 dBm
20 dBm
20 dBm
2.5
2.5
10 dBm
10 dBm
2
−40
0
40
Tmb (oC)
2
−40
80
f = 880 MHz.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; δ = 1 : 8; tp = 575 µs.
0
C2
C1
L1
R1
C3
Z2
C4
typ.
1.35 A
VC
VS
MBG743
Fig.16 Test circuit.
1996 May 21
80
Fig.15 Control voltage as a function of mounting
base temperature; typical values.
handbook, full pagewidth
RF
input
Tmb (oC)
f = 915 MHz.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; δ = 1 : 8; tp = 575 µs.
Fig.14 Control voltage as a function of mounting
base temperature; typical values.
Z1
40
7
RF
output
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
90
handbook, full pagewidth
1
2
3
4
50 Ω
input
50 Ω
output
VC
60
MSA915
VS
Dimensions in mm.
Fig.17 Printed-circuit board layout.
List of components (see Fig.16)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2
multilayer ceramic chip capacitor
680 pF
2222 851 11681
C3
tantalum capacitor
2.2 µF; 35 V
−
C4
electrolytic capacitor
47 µF; 40 V
2222 030 37479
L1
Grade 4S2 Ferroxcube bead
Z1, Z2
stripline; note 1
50 Ω
R1
metal film resistor
100 Ω; 0.6 W
4330 030 36300
width = 2.33 mm −
2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness
1⁄ inch.
32
1996 May 21
8
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MLB740
300
handbook, halfpage
Advised solder types are types with a liquidus less than or
equal to 210 °C.
T mb
( oC)
Solder dots or solder prints must be large enough to wet
the contact areas.
200
Footprints for soldering should cover the module contact
area +0.1 mm on all sides.
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these ovens.
100
Hand soldering must be avoided because the soldering
iron tip can exceed the maximum permitted temperature of
250 °C and damage the module.
0
0
100
200
300
t (s)
400
The maximum temperature profile and soldering time is
indicated as follows (see Fig.18):
t = 350 s at 100 °C
Fig.18 Maximum allowable temperature profile.
t = 300 s at 125 °C
t = 200 s at 150 °C
t = 100 s at 175 °C
t = 50 s at 200 °C
t = 5 s at 250 °C (maximum temperature).
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Triclean B/S
• Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
1996 May 21
9
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
PACKAGE OUTLINE
25.0
24.6
handbook, full pagewidth
1.65
1.25
22.1
21.7
3.0
2.6
4.3
3.9
3.1 (4×)
2.9
13.4
13.0
5.1
4.9
2.4
2.2
1
2
3
0.55 (4×)
0.45
3.7
3.3
5.08
7.62
5.08
Dimensions in mm.
Fig.19 SOT321B.
1996 May 21
1.2
min
4
10
0.25 M
(4×)
0.1
MSA397
0.30
0.20
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 21
11