BS850 Vishay Semiconductors formerly General Semiconductor DMOS Transistor (P-Channel) TO-236AB (SOT-23) 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 1. Gate 2. Source 3. Drain .016 (0.4) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout .045 (1.15) .037 (0.95) 1 0.079 (2.0) Pin Configuration .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features Mechanical Data • • • • • • Case: SOT-23 Plastic Package Weight: approx. 0.008 grams Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage –VDSS 60 V Drain-Gate Voltage –VDGS 60 V Gate-Source-Voltage (pulsed) VGS ± 20 V Drain Current (continuous) –ID 250 mA Power Dissipation at TSB = 50°C Ptot 0.310 (1) W Thermal Resistance Junction to Substrate Backside RθSB 320(1) °C/W Thermal Resistance Junction to Ambient Air RθJA 450 (1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on Fiberglass Substrate, see layout on second page Document Number 88181 10-May-02 www.vishay.com 1 BS850 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage –V(BR)DSS –ID = 100µA, VGS = 0 60 90 — V Gate Threshold Voltage VGS(th) VGS = VDS, –I D = 1m A 1.0 2.0 3.0 V Gate-Body Leakage Current –IGSS –VGS = 15V, VDS = 0 — — 10 nA Drain Cutoff Current –IDSS –VDS = 25V, VGS = 0 — — 0.5 µA RDS(on) –VGS = 10V, –ID = 200mA — 3.5 5.0 Ω Forward Transconductance gm –VDS = 10V, –ID = 200mA, f = 1MHz — 200 — mS Input Capacitance Ciss –VDS = 10V, VGS = 0, f = 1MHz — 60 — pF Turn-On Time ton –VGS = 10V, –VDS = 10V — 5 — ns Turn-Off Time toff RD = 100Ω 25 — ns Symbol Test Condition Value Unit Max. Forward Current (continuous) IF Tamb = 25°C 0.3 A Forward Voltage Drop (typ.) VF VGS = 0, IF = 0.12A Tj = 25°C 0.85 V J Drain-Source On-State Resistance — Note: (1)Device on fiberglass substrate, see layout Inverse Diode Parameters Layout for RthJA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) 0.2 (5) 0.06 (1.5) Dimensions in inches (millimeters) 0.20 (5.1) www.vishay.com 2 Document Number 88181 10-May-02 BS850 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88181 10-May-02 www.vishay.com 3 BS850 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88181 10-May-02 BS850 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88181 10-May-02 www.vishay.com 5