GFD30N03 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET H C N TREENFET G TO-252 (DPAK) VDS 30V RDS(ON) 15mΩ ID 43A D ® 0.265 (6.73) 0.255 (6.48) G 0.094 (2.39) 0.087 (2.21) S 0.214 (5.44) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) 0.190 (4.826) D 0.050 (1.27) 0.035 (0.89) 0.165 (4.191) 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) G 0.410 (10.41) 0.380 (9.65) 0.060 (1.52) 0.045 (1.14) S 0.100 (2.54) 0.197 (5.00) 0.177 (4.49) 0.118 (3.0) 0.035 (0.89) 0.028 (0.71) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.204 (5.18) 0.156 (3.96) 0.020 (0.51) min. 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.243 (6.172) Dimensions in inches and (millimeters) 0.063 (1.6) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body • • • • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Weight: 0.011oz., 0.4g Maximum Ratings and Thermal Characteristics (T C Parameter = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 43 IDM 120 PD 44.5 17.8 W TJ, Tstg –55 to 150 °C RθJC 2.8 RθJA 50 Continuous Drain Current (1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance (2) Junction-to-Ambient Thermal Resistance Unit V A °C/W Note: (1) Pulse width limited by maximum junction temperature (2) 1-in2 2oz. Cu PCB mounted Document Number 74557 10-Dec-01 www.vishay.com 1 GFD30N03 Vishay Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – 3.0 V IGSS VGS = ±20V, VDS = 0V – – ±100 nA IDSS VDS = 30V, VGS = 0V – – 1 µA ID(on) VDS ≥ 5V, VGS = 10V 40 – – A VGS = 10V, ID = 20A – 12.5 15 VGS = 4.5V, ID = 17A – 17.5 21 VDS = 15V, ID = 20A – 35 – VDS=15V, VGS=5.0V, ID =20A – 16 22 – 34 48 – 5.7 – – 4.7 – – 10 20 – 9 18 – 47 75 – 13 26 J Static Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = 15V, VGS = 10V ID = 20A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time ID ≅ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 1850 – Output Capacitance Coss VDS = 15V – 315 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 150 – IS – – – 20 A VSD IS = 20A, VGS = 0V – 0.91 1.3 V pF Source-Drain Diode Max Diode Forward Current (1) Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH www.vishay.com 2 Document Number 74557 10-Dec-01 GFD30N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 60 VGS = 10V 5.0V 6.0V 4.5V VDS = 10V 50 60 ID -- Drain Current (A) ID -- Drain Source Current (A) 70 4.0V 50 40 3.5V 30 20 VGS = 3.0V 40 30 20 --55°C TJ = 125°C 10 10 0 25°C 0 0 1 2 3 4 5 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 2.0 5 0.035 0.03 1.8 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.6 1.4 1.2 1 0.8 0.6 --50 0.025 VGS = 4.5V 0.02 0.015 VGS = 10V 0.01 0.005 0 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 ID -- Drain Current (A) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 RDS(ON) -- On-Resistance (Normalized) VGS = 10V ID = 20A 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Document Number 74557 10-Dec-01 www.vishay.com 3 GFD30N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.05 VDS = 15V ID = 20A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 20A 0.04 0.03 TJ = 125°C 0.02 25°C 0.01 0 8 6 4 2 0 2 4 6 8 10 0 10 15 20 25 30 Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 35 100 2500 VGS = 0V f = 1MHZ VGS = 0V 2000 Ciss IS -- Source Current (A) C -- Capacitance (pF) 5 VGS -- Gate-to-Source Voltage (V) 1500 1000 500 10 TJ = 125°C 1 25°C 0.1 --55°C Coss Crss 0 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) www.vishay.com 4 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD -- Source-to-Drain Voltage (V) Document Number 74557 10-Dec-01 GFD30N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Transient Thermal Impedance Fig. 11 – Power vs. Pulse Duration 1 1000 Single Pulse RθJC = 2.8°C/W TC = 25°C 800 600 0.1 400 200 0.01 0.0001 0.001 0.01 0.1 1 10 0 0.0001 0.001 0.01 0.1 1 10 Fig. 12 – Maximum Safe Operating Area ID -- Drain Current (A) 1000 10 0µ 100 s RDS(ON) Limit 1m DC 10 s 100ms VGS = 10V Single Pulse RθJC = 2.8°C/W TC = 25°C 1 0.1 10 m s 1 10 100 VDS -- Drain-Source Voltage (V) Document Number 74557 10-Dec-01 www.vishay.com 5