SEMTECH_ELEC BC859

BC859
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups A, B
and C, according to its DC current gain.
As complementary type the NPN transistor BC849 is
recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta=25 OC)
Symbol
Value
Unit
Collector Base Voltage
-VCBO
30
V
Collector Emitter Voltage
-VCEO
30
V
Collector Emitter Voltage
-VCES
30
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
100
mA
Peak Collector Current
-ICM
200
mA
Peak Base Current
-IBM
200
mA
Peak Emitter Current
IEM
200
mA
Power Dissipation
Ptot
200
mW
Thermal Resistance Junction to Ambient Air
RθJA
450
O
Thermal Resistance Junction to Substrate Backside
RθSB
320
O
Junction Temperature
TJ
150
O
Storage Temperature Range
TS
-65 to +150
O
C/W
C/W
C
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
BC859
Characteristics at Ta =25 OC
Symbol
Min.
Typ.
Max.
Unit
-
h-Parameters at -VCE=5V, -IC=2mA, f=1KHz
Current Gain
Current Gain Group
Input Impedance
Output Admittance
Reverse VoltageTransfer Ratio
A
hfe
220
-
-
B
hfe
-
330
-
-
C
hfe
-
600
-
-
Current Gain Group A
hie
1.6
2.7
4.5
KΩ
B
hie
3.2
4.5
8.5
KΩ
C
hie
6.0
8.7
15
KΩ
A
hoe
-
18
30
µS
B
hoe
-
30
60
µS
C
hoe
-
60
110
µS
Current Gain Group A
hre
-
1.5 10
Current Gain Group
B
hre
-
.
-4
-
-
.
-4
-
-
.
-4
-
-
2 10
C
hre
-
3 10
A
B
C
hFE
hFE
hFE
110
200
420
-
220
450
800
-
-VCEsat
-VCEsat
-
-
300
650
mV
mV
at -IC=2mA, -VCE=5V
-VBE(on)
600
-
750
mV
at -IC=10mA, -VCE=5V
-VBE(on)
-
-
820
mV
Collector Cutoff Current
at -VCB=30V
at -VCB=30V, TJ=150OC
-ICBO
-ICBO
-
-
15
5
nA
µA
DC Current Gain
at -VCE=5V, -IC=2mA
Current Gain Group
Collector–Emitter Saturation Voltage
at -IC=10mA, -IB=0.5mA
at -IC=100mA, -IB=5mA
Base-Emitter On Voltage
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
BC859
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
fT
-
150
-
MHz
CCBO
-
-
6
pF
at -IC=200µA, -VCE=5V, RG=2KΩ, f=1.0kHz, Δf=200Hz
F
-
-
4
dB
at -IC=200µA, -VCE=5V, RG=2KΩ, f=30...15000Hz
F
-
-
4
dB
Gain Bandwidth Product
at -VCE=5V, -IC=10mA, f=100MHz
Collector Base Capacitance
at -VCB=10V, f=1.0MHz
Noise Figure
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
BC859
Admissible power dissipation
versus temperature of substrate backside
Collector current
versus base emitter voltage
mW
500
mA
2
10
-VCE=5V
Tamb=25 oC
5
4
3
400
2
10
P tot
300
-IC
5
4
3
2
200
1
5
4
3
100
2
10 -1
0
0
200 oC
100
0
1V
0.5
TSB
-VBE
Gain bandwidth product
versus collector current
Pulse thermal resistance
versus pulse duration (normalized)
MHz
10 3
10
5
4
3
2
0.5
7
0.2
5
4
Tamb=25 o C
3
10 -1
r thSB
10
fT
0.05
5
4
3
2
R thSB
0.1
-2
5
4
3
2
10 2
0.01
7
5 -3
5
4
tp
-VCE=10V
5V
0.02
v=0
10 -3
2
2V
3
tp
v=
T
PI
2
T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1s
10
0.1
2
tp
5
1
2
5
10
2
5
100mA
-IC
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
BC859
DC current gain
versus collector current
Collector saturation voltage
versus collector current
V
0.5
3
10
-VCE=5V
-I C/-I B =20
5
4
3
0.4
o
100 C
2
o
Tamb
10 2
-VCEsat 0.3
h FE
=2 5 C
o
-50 C
5
4
3
2
0.2
10
o
Tamb=100 C
o
25 C
0.1
5
4
3
-50 o C
0
10 -1 2
5
1
2
5
10
2
5
2
1
102 mA
10 -2
10-1
10 2 mA
10
1
-I C
-I C
Noise figure
versus collector current
dB
20
18
dB
20
-VCE=5V
f=1KHz
Tamb=25o C
18
100K
16
14
F
Noise figure
versus collector emitter voltage
-I C=0.2mA
R G=2K
f=1KHz
o
Tamb=25 C
16
500
F
10K
R G=1M
12
14
12
10
1K
8
10
8
6
6
500
4
4
2
2
0
10 -3
10 -2
10 -1
1
10 mA
0
10 -1 2
-I C
5
1
2
5
10
2
5
102 V
-VCE
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
BC859
Collector-base capacitance,
Emitter-base capacitance
versus reverse bias voltage
Collector-Base cutoff current
versus ambient temperature
pF
nA
4
10
20
Tamb=25 o C
18
3
10
-I CBO
16
14
CCBO
CEBO 12
2
10
10
CEBO
10
8
CCBO
6
1
4
Test voltage -VCBO:
equal to the given
maximum value -VCEO
2
typical
maximum
10 -1
0
0
o
200 C
100
2
0.1
5
1
Tj
Noise figure
versus collector current
2
dB
20
6
18
10
-VCE=5V
f=120Hz
Tamb=25o C
4
16
R G=1M
2
F
h ie
100K
10K
1K
14
500
he(-I C)
he(-I C=2mA) 6
12
4
10
2
10V
5
-VCBO,-VEBO
Relative h-parameters
versus collector current
10
2
8
h re
6
1
6
4
h fe
4
2
2
-VCE=5V
Tamb=25o C
h oe
10 -1
10 -1 2
4
1
2
4
10mA
0
10 -3
-I C
10 -2
10 -1
1
10 mA
-I C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005