BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 30 V Collector Emitter Voltage -VCES 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Peak Collector Current -ICM 200 mA Peak Base Current -IBM 200 mA Peak Emitter Current IEM 200 mA Power Dissipation Ptot 200 mW Thermal Resistance Junction to Ambient Air RθJA 450 O Thermal Resistance Junction to Substrate Backside RθSB 320 O Junction Temperature TJ 150 O Storage Temperature Range TS -65 to +150 O C/W C/W C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Characteristics at Ta =25 OC Symbol Min. Typ. Max. Unit - h-Parameters at -VCE=5V, -IC=2mA, f=1KHz Current Gain Current Gain Group Input Impedance Output Admittance Reverse VoltageTransfer Ratio A hfe 220 - - B hfe - 330 - - C hfe - 600 - - Current Gain Group A hie 1.6 2.7 4.5 KΩ B hie 3.2 4.5 8.5 KΩ C hie 6.0 8.7 15 KΩ A hoe - 18 30 µS B hoe - 30 60 µS C hoe - 60 110 µS Current Gain Group A hre - 1.5 10 Current Gain Group B hre - . -4 - - . -4 - - . -4 - - 2 10 C hre - 3 10 A B C hFE hFE hFE 110 200 420 - 220 450 800 - -VCEsat -VCEsat - - 300 650 mV mV at -IC=2mA, -VCE=5V -VBE(on) 600 - 750 mV at -IC=10mA, -VCE=5V -VBE(on) - - 820 mV Collector Cutoff Current at -VCB=30V at -VCB=30V, TJ=150OC -ICBO -ICBO - - 15 5 nA µA DC Current Gain at -VCE=5V, -IC=2mA Current Gain Group Collector–Emitter Saturation Voltage at -IC=10mA, -IB=0.5mA at -IC=100mA, -IB=5mA Base-Emitter On Voltage SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit fT - 150 - MHz CCBO - - 6 pF at -IC=200µA, -VCE=5V, RG=2KΩ, f=1.0kHz, Δf=200Hz F - - 4 dB at -IC=200µA, -VCE=5V, RG=2KΩ, f=30...15000Hz F - - 4 dB Gain Bandwidth Product at -VCE=5V, -IC=10mA, f=100MHz Collector Base Capacitance at -VCB=10V, f=1.0MHz Noise Figure SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Admissible power dissipation versus temperature of substrate backside Collector current versus base emitter voltage mW 500 mA 2 10 -VCE=5V Tamb=25 oC 5 4 3 400 2 10 P tot 300 -IC 5 4 3 2 200 1 5 4 3 100 2 10 -1 0 0 200 oC 100 0 1V 0.5 TSB -VBE Gain bandwidth product versus collector current Pulse thermal resistance versus pulse duration (normalized) MHz 10 3 10 5 4 3 2 0.5 7 0.2 5 4 Tamb=25 o C 3 10 -1 r thSB 10 fT 0.05 5 4 3 2 R thSB 0.1 -2 5 4 3 2 10 2 0.01 7 5 -3 5 4 tp -VCE=10V 5V 0.02 v=0 10 -3 2 2V 3 tp v= T PI 2 T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1s 10 0.1 2 tp 5 1 2 5 10 2 5 100mA -IC SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 DC current gain versus collector current Collector saturation voltage versus collector current V 0.5 3 10 -VCE=5V -I C/-I B =20 5 4 3 0.4 o 100 C 2 o Tamb 10 2 -VCEsat 0.3 h FE =2 5 C o -50 C 5 4 3 2 0.2 10 o Tamb=100 C o 25 C 0.1 5 4 3 -50 o C 0 10 -1 2 5 1 2 5 10 2 5 2 1 102 mA 10 -2 10-1 10 2 mA 10 1 -I C -I C Noise figure versus collector current dB 20 18 dB 20 -VCE=5V f=1KHz Tamb=25o C 18 100K 16 14 F Noise figure versus collector emitter voltage -I C=0.2mA R G=2K f=1KHz o Tamb=25 C 16 500 F 10K R G=1M 12 14 12 10 1K 8 10 8 6 6 500 4 4 2 2 0 10 -3 10 -2 10 -1 1 10 mA 0 10 -1 2 -I C 5 1 2 5 10 2 5 102 V -VCE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Collector-base capacitance, Emitter-base capacitance versus reverse bias voltage Collector-Base cutoff current versus ambient temperature pF nA 4 10 20 Tamb=25 o C 18 3 10 -I CBO 16 14 CCBO CEBO 12 2 10 10 CEBO 10 8 CCBO 6 1 4 Test voltage -VCBO: equal to the given maximum value -VCEO 2 typical maximum 10 -1 0 0 o 200 C 100 2 0.1 5 1 Tj Noise figure versus collector current 2 dB 20 6 18 10 -VCE=5V f=120Hz Tamb=25o C 4 16 R G=1M 2 F h ie 100K 10K 1K 14 500 he(-I C) he(-I C=2mA) 6 12 4 10 2 10V 5 -VCBO,-VEBO Relative h-parameters versus collector current 10 2 8 h re 6 1 6 4 h fe 4 2 2 -VCE=5V Tamb=25o C h oe 10 -1 10 -1 2 4 1 2 4 10mA 0 10 -3 -I C 10 -2 10 -1 1 10 mA -I C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005