BS870 Vishay Semiconductors formerly General Semiconductor DMOS Transistor (N-Channel) TO-236AB (SOT-23) 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Gate 2. Source 3. Drain .007 (0.175) .005 (0.125) max. .004 (0.1) 2 .037(0.95) .037(0.95) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout .045 (1.15) .037 (0.95) 1 0.079 (2.0) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features Mechanical Data • • • • • • Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source-Voltage (pulsed) VGS ± 20 V ID 250 mA Ptot 0.310 (1) W Thermal Resistance Junction to Substrate Backside RθSB 320 (1) °C/W Thermal Resistance Junction to Ambient Air RθJA 450 (1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Drain Current (continuous) Power Dissipation at TSB = 50°C Note: (1) Ceramic Substrate 0.7mm; 2.5 cm2 area Document Number 88182 10-May-02 www.vishay.com 1 BS870 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T J = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Drain-Source Breakdown Voltage V(BR)DSS ID = 100µA, VGS = 0 60 80 — VGS(th) VGS = VDS, I D = 1m A 1.0 2.0 3.0 Gate-Body Leakage Current IGSS VGS = 15V, VDS = 0V — — 10 nA Drain Cutoff Current IDSS VDS = 25V, VGS = 0V — — 0.5 µA RDS(on) VGS = 10V, ID = 200mA — 3.5 5.0 Ω Forward Transconductance gm VDS = 10V, ID = 200mA, f = 1MHz — 200 — mS Input Capacitance Ciss VDS = 10V, VGS = 0 f = 1MHz — 30 — pF Turn-On Time ton VGS = 10V, VDS = 10V — 5 — ns Turn-Off Time toff RD = 100Ω 25 — ns Symbol Test Condition Value Unit Max. Forward Current (continuous) IF Tamb = 25 °C 0.3 A Forward Voltage Drop (typ.) VF VGS= 0V, IF = 0.3A Tj = 25°C 0.85 V Gate Threshold Voltage Drain-Source On-State Resistance — Unit V Note: (1)Device on fiberglass substrate, see layout Inverse Diode Parameter Layout for RthJA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) 0.2 (5) 0.06 (1.5) Dimensions in inches and (millimeters) 0.20 (5.1) www.vishay.com 2 Document Number 88182 10-May-02 BS870 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) BS870 BS870 ˚ ˚ BS870 ˚ Document Number 88182 10-May-02 BS870 ˚ www.vishay.com 3 BS870 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) BS870 BS870 ˚ ˚ BS870 BS870 ˚ ˚ www.vishay.com 4 Document Number 88182 10-May-02 BS870 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) BS870 BS870 ˚ BS870 BS870 ˚ Document Number 88182 10-May-02 www.vishay.com 5