Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 PIN BT131 series QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. BT131Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION MAX. UNIT 600 800 600 1 800 1 V A 16 16 A SYMBOL DESCRIPTION 1 main terminal 2 2 gate 3 main terminal 1 T2 T1 G 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate power Average gate power Storage temperature Junction temperature CONDITIONS MIN. - full sine wave; Tlead ≤ 74 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -600 6001 UNIT -800 800 V - 1 A - 16 17.6 1.28 A A A2s -40 - 50 50 50 10 2 5 0.5 150 125 A/µs A/µs A/µs A/µs A W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. August 2003 1 Rev 3.000 Philips Semiconductors Product specification Triacs logic level BT131 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-lead Thermal resistance junction to lead Thermal resistance junction to ambient full cycle half cycle pcb mounted;lead length = 4mm Rth j-a MIN. TYP. MAX. UNIT - 150 60 80 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 0.4 1.3 1.4 3.8 3 3 3 7 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ 0.2 - 1.2 4.0 1.0 2.5 1.3 1.2 0.7 0.3 0.1 5 8 5 8 5 1.5 1.5 0.5 mA mA mA mA mA V V V mA MIN. TYP. MAX. UNIT 5 15 - V/µs - 2 - µs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 2.0 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs tgt August 2003 2 Rev 3.000 Philips Semiconductors Product specification Triacs logic level BT131 series 65 1 α= Ptot (W) 1.2 Tlead (max) (°C) 180 ° α 108 C 1 120 ° 0.75 IT(RMS) / A 80 90 ° 0.8 60 ° 0.5 95 30 ° 0.6 0.4 110 0.25 0.2 125 0 0 0.2 0.4 0.6 1 0.8 0 -50 1.2 0 IT(RMS) (A) Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 3 time 2.0 Tj initial = 25 C max 1.5 100 dI T/dt limit 1 T2- G+ quadrant 0.5 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. T 8 1.6 ITSM IT 10 VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 6 1 4 0.8 2 0.6 0 0.1 1 surge duration / s Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 51˚C. ITSM / A 10 IT(RMS) / A 2.5 T 12 150 ITSM IT 10 10us 100 Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. BT132D ITSM / A 50 Tsp / C 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. August 2003 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 3.000 Philips Semiconductors Product specification Triacs logic level 3 BT131 series IGT(Tj) IGT(25 C) IT / A 2 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 1.5 Vo = 1.0 V Rs = 0.21 Ohms 2 typ 1 1.5 max 1 0.5 0.5 0 0 -50 0 50 Tj / C 100 150 0.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 100 2.5 Zth j-sp (K/W) 10 unidirectional 2 bidirectional 1 1.5 P D 1 tp 0.1 t 0.5 0 -50 0 50 Tj / C 100 0.01 10us 150 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. IH(Tj) IH(25C) 1000 dVD/dt (V/us) 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. August 2003 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 3.000 Philips Semiconductors Product specification Triacs logic level BT131 series MECHANICAL DATA Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 e1 L L1(1) 1.27 14.5 12.7 2.5 e 2.54 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES OUTLINE VERSION IEC SOT54 JEDEC EIAJ TO-92 SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". August 2003 5 Rev 3.000 Philips Semiconductors Product specification Triacs logic level BT131 series DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. August 2003 6 Rev 3.000