Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 variant PIN BT149 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX. MAX. MAX. MAX. UNIT BT149 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION B 200 D 400 E 500 G 600 V 0.5 0.5 0.5 0.5 A 0.8 8 0.8 8 0.8 8 0.8 8 A A SYMBOL DESCRIPTION 1 cathode 2 gate 3 anode a k g 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages - IT(AV) Average on-state current IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature IGM VGM VRGM PGM PG(AV) Tstg Tj half sine wave; Tlead ≤ 83 ˚C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 ˚C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs MAX. B 2001 D 4001 E 5001 UNIT G 6001 V - 0.5 A - 0.8 8 9 A A A - 0.32 50 A2s A/µs -40 - 1 5 5 2 0.1 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Thyristors logic level BT149 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-lead Thermal resistance junction to lead Rth j-a Thermal resistance junction to ambient CONDITIONS pcb mounted; lead length = 4mm MIN. TYP. MAX. UNIT - - 60 K/W - 150 - K/W MIN. TYP. MAX. UNIT 0.2 50 2 2 1.2 0.5 0.3 200 6 5 1.35 0.8 - µA mA mA V V V - 0.05 0.1 mA MIN. TYP. MAX. UNIT - 25 - V/µs - 2 - µs - 100 - µs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ IT = 1 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; RGK = 1 kΩ DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ tgt tq September 1997 2 Rev 1.200 Philips Semiconductors Product specification Thyristors logic level 0.8 BT149 series Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 0.7 0.6 0.5 Tc(max) / C 77 a = 1.57 83 BT169 0.4 8 89 95 2.8 BT169 I TSM IT 1.9 2.2 ITSM / A 10 time T Tj initial = 25 C max 6 101 4 0.3 107 0.2 113 0.1 119 4 2 0 0 0.1 0.2 0.3 0.4 IF(AV) / A 0.5 0.6 125 0.7 0 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. BT169 ITSM / A 1 2 BT169 IT(RMS) / A 1.5 100 1 10 I TSM IT 0.5 time T Tj initial = 25 C max 1 10us 100us 0 0.01 10ms 1ms 0.1 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 1 IT(RMS) / A 1 10 surge duration / s T/s Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 83˚C. BT169 1.6 VGT(Tj) VGT(25 C) BT151 83 C 0.8 1.4 1.2 0.6 1 0.4 0.8 0.2 0 -50 0.6 0 50 Tlead / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus lead temperature, Tlead. September 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.200 Philips Semiconductors Product specification Thyristors logic level 3 BT149 series IGT(Tj) IGT(25 C) 5 BT169 BT169 IT / A Tj = 125 C Tj = 25 C 2.5 4 2 3 Vo = 1.067 V Rs = 0.187 ohms max typ 1.5 2 1 1 0.5 0 -50 0 0 50 Tj / C 100 150 IL(Tj) IL(25 C) 0.5 1 1.5 2 2.5 VT / V Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 100 BT169 2.5 BT169 Zth j-lead (K/W) 10 2 1 1.5 P D 1 tp 0.1 0.5 t 0 -50 0 50 Tj / C 100 0.01 10us 150 IH(Tj) IH(25 C) 1ms 10ms 0.1s 1s 10s tp / s Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj, RGK = 1 kΩ. 3 0.1ms 1000 BT169 dVD/dt (V/us) 2.5 100 RGK = 1 kohms 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj, RGK = 1 kΩ. September 1997 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 1.200 Philips Semiconductors Product specification Thyristors logic level BT149 series MECHANICAL DATA Dimensions in mm 2.54 Net Mass: 0.2 g 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 2.5 max 12.7 min 0.48 0.40 321 0.40 min Fig.13. TO92; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". September 1997 5 Rev 1.200 Philips Semiconductors Product specification Thyristors logic level BT149 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.200