ETC FS0609MH

FS0609.H
STANDARD SCR
TO220-AB
On-State Current
Gate Trigger Current
6 Amp
> 2 mA to < 15 mA
Off-State Voltage
200 V ÷ 600 V
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
K
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface
mount technology.
A
G
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
IT(RMS)
IT(AV)
ITSM
ITSM
I2t
VGRM
IGM
PGM
PG(AV)
Tj
Tstg
Tsld
SYMBOL
VDRM
VRRM
PARAMETER
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
PARAMETER
Repetitive Peak Off State
Voltage
CONDITIONS
Min.
180º Conduction Angle, Tc = 110 ºC
Half Cycle, Θ = 180 º, TC = 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
tp = 10ms, Half Cycle
IGR = 10 µA
20 µs max.
20 µs max.
20ms max.
-40
-40
10s max.
CONDITIONS
RGK = 1 KΩ
Max.
Unit
6
3.8
73
70
24.5
5
4
10
1
+125
+150
260
A
A
A
A
A 2s
V
A
W
W
ºC
ºC
ºC
VOLTAGE
B
200
D
400
Unit
M
600
V
Dec - 02
FS0609.H
STANDARD SCR
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
SENSITIVITY
Gate Trigger Current
VD = 12 VDC , RL = 33Ω. Tj = 25 ºC
IDRM / IRRM
Off-State Leakage Current
VD = VDRM ,
VR = VRRM ,
VTM
VGT
VGD
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
IH
IL
dv / dt
Holding Current
IT = 100 mA , Gate open Tj = 25 ºC MAX
IG = 1.2 IGT
Tj = 25 ºC TYP
Latching Current
Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open Tj = 110 ºC MIN
Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz,
MIN
di / dt
Tj = 25 ºC
Tj = 110 ºC
at IT = 12 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC
VD = VDRM , RL = 3.3KΩ,
Tj = 125 ºC
09
2
15
0.01
2
1.6
1.5
0.2
MIN
MAX
MAX
MAX
MAX
MAX
MIN
IGT
Unit
mA
mA
V
V
V
30
mA
50
200
mA
V/µs
50
A/µs
Tj = 125 ºC
Rth(j-c)
Thermal Resistance
Junction-Case for DC
2.5
ºC/W
Rth(j-a)
Thermal Resistance
Junction-Amb for DC
60
ºC/W
Vt0
Threshold Voltage
Tj = 125 ºC
MAX
0.85
V
Rd
Dynamic resistance
Tj = 125 ºC
MAX
46
mΩ
PART NUMBER INFORMATION
F
S
06
09
B
H
00
TR
FAGOR
PACKAGING
FORMING
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
Dec - 02
FS0609.H
STANDARD SCR
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2: Correlation between maximum average power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P (W)
T case (ºC)
P (W)
10
10
α = 180 º
8
α = 180 º
8
Rth=10 ºC/W Rth=5 ºC/W
α = 120 º
α = 90 º
6
Rth=0 ºC/W
-110
Rth=15 ºC/W
D.C.
6
α = 60 º
α = 30 º
-115
4
4
Rth=37 ºC/W
-120
2
2
360 º
α
IT(av)(A)
0
0
1
2
3
4
5
6
0
7
0
Fig. 3: Average and D.C. on-state current
versus case temperature.
25
50
75
100
-125 Tamb (ºC)
125
Fig. 4: Average and D.C. on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout).
I T(av) (A)
I T(av) (A)
2.2
10
2.0
D.C.
1.8
8
D.C.
1.6
1.4
6
α = 180 º
1.2
α = 180 º
1.0
4
0.8
0.6
2
0.4
0.2
T case (ºC)
0
0
25
50
75
100
Tamb (ºC)
0.0
125
0
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
25
50
75
100
125
Fig. 6: Relative variation of gate trigger
current and holding current versus junction
temperature.
K = [Zth(j-c) / Rth (j-c)]
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
1.0
2.0
1.8
1.6
0.5
IGT
1.4
1.2
IH
1.0
0.8
0.6
0.2
0.4
0.2
0.1
1E-3
tp (s)
1E-2
1E-1
1E+0
0.0
Tj (ºC)
-40 -20 0
20 40 60 80 100 120 140
Dec - 02
FS0609.H
STANDARD SCR
Fig. 7: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
80
100.0
Tj initial = 25 ºC
F = 50 Hz
70
Tj = Tj max.
60
10.0
50
40
Tj = 25 ºC
30
1.0
Tj max
Vto = 0.85 V
Rt = 46 mΩ
20
10
Number of cycles
0
1
10
100
1000
VTM(V)
0.1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I2t.
ITSM(A). I2t (A2s)
300
Tj initial = 25 ºC
ITSM
100
50
I2 t
20
tp(ms)
10
2
1
5
10
PACKAGE MECHANICAL DATA
TO-220AB
REF.
c
B
b2
L
F
øI
A
14
c2
a1
13
12
a2
M
b1
e
c1
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
I2
I3
M
Min.
15.20
DIMENSIONS
Milimeters
Nominal
Max.
15.90
3.75
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
15.80
2.65
1.14
1.14
16.40
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
16.80
2.95
1.70
1.70
2.60
Dec - 02