FT0110.A STANDARD TRIAC TO92 (Plastic) On-State Current Gate Trigger Current 1.0 Amp < 25 mA Off-State Voltage 200 V ÷ 600 V MT1 G MT2 The FT01 series of TRIACs uses a high performance PNPN technology. These part are intended for general purpose applications. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current Tj Tstg Tsld Operating Temperature Storage Temperature Soldering Temperature SYMBOL VDRM VRRM CONDITIONS All Conduction Angle, TL = 70 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz Tj = 125 ºC -40 -40 1.6 mm from case, 10s max. PARAMETER Repetitive Peak Off State Voltage Min. Max. Unit 1.0 8.5 8 0.35 1 2 0.1 20 A A A A2s A W W A/µs +125 +150 260 ºC ºC ºC VOLTAGE B 200 D 400 Unit M 600 V Jul - 03 FT0110.A STANDARD TRIAC Electrical Characteristics SYMBOL IGT IDRM /IRRM Vto Rd VTM * VGT VGD IH * IL dv / dt* (dv/dt)c* Rth(j-l) Rth(j-a) PARAMETER Quadrant CONDITIONS Gate Trigger Current SENSITIVITY 10 25 25 Q1÷Q3 Q4 MAX MAX V = V , T = 125 ºC D DRM j Off-State Leakage Current MAX VR = VRRM , Tj = 25 ºC MAX Tj = 125 ºC Threshold Voltage MAX T = 125 ºC j Dynamic Resistance MAX IT = 1.1 Amp, tp = 380 µs, Tj = 25 ºC On-state Voltage MAX VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q4 MAX Gate Trigger Voltage VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q4 MIN Gate Non Trigger Voltage IT = 50 mA Tj = 25 ºC Holding Current MAX IG = 1.2 IGT, Tj = 25 ºC Latching Current Q1,Q3,Q4 MAX Q2 MAX Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open MIN Tj = 125 ºC VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Critical rise rate of commutating off-state Voltage (di/dt)c= 0.44 A/ms Tj = 110 ºC MIN Thermal Resistance Junction-Leads for AC Thermal Resistance Junction-Ambient Unit mA mA µA V mΩ V V V mA mA 0.5 5 0.95 400 1.5 1.3 0.2 25 25 50 100 V/µs 5 V/µs 60 ºC/W 150 ºC/W (*) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F T 01 10 B A 00 BU FAGOR PACKAGING FORMING TRIAC CURRENT CASE VOLTAGE SENSITIVITY Jul - 03 FT0110.A STANDARD TRIAC Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle) Fig. 2: RMS on-state current versus ambient temperature (full cycle) I T(RMS) (A) P (W) 1.25 1.25 1.0 1.0 0.75 0.75 0.50 0.50 0.25 0.25 IT(RMS)(A) 0.0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3: RMS on-state current versus ambient temperature (full cycle) T lead (ºC) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. I T(RMS) (A) Zth(j-a) / Rth(j-a) 1 1.00 0.8 0.6 0.10 0.4 0.2 0 T amb (ºC) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current , holding current and latching current versus junction temperature. 0.01 1E-3 tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Igt , Ih , Il (Tj) I TSM (A) Igt , Ih , Il (Tj = 25 ºC) 2.6 8 Tj initial = 25 ºC 2.4 7 2.2 2.0 6 1.8 Igt 1.6 5 1.4 4 1.2 1.0 Ih & Il 3 0.8 2 0.6 0.4 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 Number of cycles 1 1 10 100 1000 Jul - 03 FT0110.A STANDARD TRIAC Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). ITSM(A). Pt (A2s) ITM(A) 10 100 Tj initial = 25 ºC Tj initial 25 ºC Tj max 10 ITSM 1 Tj max Vto = 0.95 V Rt = 0.420Ω 1 2 I t 1 10 PACKAGE MECHANICAL DATA VTM(V) 0.1 tp(ms) 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 TO92 (Plastic) REF. A C H a D B b G E F A B C D E F G H a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 DIMENSIONS Milimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Marking: type number Weight: 0.2 g Jul - 03