GS9013 Small Signal Transistors (NPN) TO-226AA ( TO-92) 0.142 (3.6) 0.181 (4.6) ct u d ro P New Features min. 0.492 (12.5) 0.181 (4.6) • NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AFdriver stages and low power output stages such as portable radios in class-B push-pull operation. • Complementary to GS9012 Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk- 5K per container, 20K per box E7/4K per Ammo mag., 20K per box max. ∅ 0.022 (0.55) 0.098 (2.5) Bottom View Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V IC 500 Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RθJA mA (1) mW (1) °C/W 625 200 Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case 5/8/00 GS9013 Small Signal Transistors (NPN) Electrical Characteristics (T Parameter DC Current Gain J = 25°C unless otherwise noted) Symbol Current Gain Group D E F G H Test Condition Min Typ Max VCE = 1V, IC = 50mA 64 78 96 112 144 — — — — — 91 112 135 166 202 VCE = 1V, IC = 500mA 40 120 — hFE Unit — Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 20 — — V Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 — — V Collector Cut-off Current ICBO VCB = 25V, IE = 0 — — 100 nA Emitter Cut-off Current IEBO VEB = 3V, IC = 0 — — 100 nA Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA — 0.16 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA — 0.91 1.2 V Base-Emitter ON Voltage VBE(on) VCE = 1V, IC = 10mA 0.6 0.67 0.7 V