J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 –3 100 5 4 Features Benefits Applications Low On-Resistance: 111 < 30 Fast Switching—tON: 4 ns Low Leakage: 5 pA Low Capacitance: 3 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters Description The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode. For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 S 2 G 3 TO-236 (SOT-23) D 1 3 S G 2 Top View Top View J111 J112 J113 SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70232. Applications information may also be obtained via FaxBack, request document #70598. Siliconix S-52424—Rev. D, 14-Apr-97 1 J/SST111 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa (TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW (TO-226AA) . . . . . . . . . . . . . . . . . . . . . . 360 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa Limits J/SST111 Parameter Symbol Test Conditions Typb Min V(BR)GSS IG = –1 mA , VDS = 0 V –55 –35 VGS(off) VDS = 5 V, ID = 1 mA J/SST112 Max Min Max J/SST113 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current IDSS IGSS IG TA = 125_C VDS = 5 V, VGS = V 0.005 Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = 0.1 V Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V TA = 125_C –1 –5 5 –1 –3 2 –1 mA –1 nA –3 –5 ID(off) –10 20 –0.005 VDG = 15 V, ID = 10 mA Drain Cutoff Current –35 V –3 VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V –35 pA 1 1 1 nA 3 30 50 100 W 0.7 V 6 mS 25 mS Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V,, ID = 1 mA f = 1 kH kHz VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V,, VGS = V f = 1 MHz MH VDG = 10 V, ID = 1 mA f = 1 kHz 30 50 100 7 12 12 12 3 5 5 5 W pF nV⁄ √Hz 3 Switching Turn-On Time Turn-Off Time td(on) tr td(off) tf 2 VDD = 10 V, VGS( GS(H)) = 0 V S Switching See S it hi Circuit Ci it 2 ns 6 15 Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 ms duty cycle 3%. 2 NCB Siliconix S-52424—Rev. D, 14-Apr-97 J/SST111 Series Typical Characteristics On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 160 80 IDSS rDS 60 120 40 80 20 40 0 rDS(on) – Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 –4 –6 –8 TA = 25_C 80 VGS(off) = –2 V 60 40 –4 V –8 V 20 0 0 –2 0 On-Resistance vs. Drain Current 100 200 I DSS – Saturation Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( ) 100 –10 1 10 VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA) On-Resistance vs. Temperature tr approximately independent of ID VDD = 5 V, RG = 50 VGS(L) = –10 V ID = 1 mA rDS changes X 0.7%/_C 160 4 Switching Time (ns) rDS(on) – Drain-Source On-Resistance ( ) Turn-On Switching 5 200 120 VGS(off) = –2 V 80 –4 V –8 V 40 tr 3 td(on) @ ID = 12 mA 2 1 td(on) @ ID = 3 mA 0 0 –55 –35 –15 5 25 45 65 85 105 0 125 Turn-Off Switching 30 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) TA – Temperature (_C) Capacitance vs. Gate-Source Voltage 30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = –10 V f = 1 MHz 24 18 Capacitance (pF) 24 Switching Time (ns) 100 tf @ VGS(off) = –2 V 12 td(off) 18 12 Ciss @ VDS = 0 V 6 6 tf @ VGS(off) = –8 V Crss @ VDS = 0 V 0 0 0 2 4 6 ID – Drain Current (mA) Siliconix S-52424—Rev. D, 14-Apr-97 8 10 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) 3 J/SST111 Series Typical Characteristics (Cont’d) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage Noise Voltage vs. Frequency 100 50 (nV / √ Hz) e n – Noise Voltage 10 ID = 1 mA ID = 10 mA 1 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz 40 gfs 30 250 20 10 0 0 10 100 1k 10 k 0 100 k 100 IGSS @ 125_C TA = 125_C 1 nA 1 mA –10 gig 10 big (mS) 1 mA 10 mA –8 VDG = 10 V ID = 10 mA TA = 25_C ID = 10 mA 100 pA 10 pA –6 Common-Gate Input Admittance Gate Leakage Current 10 nA –4 –2 VGS(off) – Gate-Source Cutoff Voltage (V) f – Frequency (Hz) I G – Gate Leakage gos g – Output Conductance ( mS) g fs – Forward Transconductance (mS) VDS = 10 V IGSS @ 25_C 1 TA = 25_C 1 pA 0.1 0.1 pA 0 6 12 18 100 30 24 200 VDG – Drain-Gate Voltage (V) 1000 f – Frequency (MHz) Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 VDG = 10 V ID = 10 mA TA = 25_C VDG = 10 V ID = 10 mA TA = 25_C –gfg bfg –brg 1.0 10 (mS) (mS) gfg +grg 0.1 1 0.1 100 200 500 f – Frequency (MHz) 4 500 1000 0.01 100 –grg 200 500 1000 f – Frequency (MHz) Siliconix S-52424—Rev. D, 14-Apr-97 J/SST111 Series Typical Characteristics (Cont’d) Common-Gate Output Admittance Output Characteristics 100 100 VDG = 10 V ID = 10 mA TA = 25_C VGS(off) = –4 V I D – Drain Current (mA) 80 bog (mS) 10 gog 1 VGS = 0 V 60 –0.5 40 –1.0 –1.5 20 0.1 –2.0 –2.5 0 100 200 500 1000 0 2 f – Frequency (MHz) 10 8 Transfer Characteristics 100 VGS(off) = –4 V VGS(off) = –4 V VDS = 20 V 80 VGS = 0 V 24 –0.5 –1.0 16 –1.5 –2.0 8 –2.5 I D – Drain Current (mA) 32 I D – Drain Current (mA) 6 VDS – Drain-Source Voltage (V) Output Characteristics 40 4 TA = –55_C 60 25_C 40 20 125_C –3.0 0 0 0 0.2 0.4 0.6 1.0 0.8 0 VDS – Drain-Source Voltage (V) –1 –2 –3 –5 –4 VGS – Gate-Source Voltage (V) Switching Time Test Circuit J/SST111 J/SST112 J/SST113 VGS(L) –12 V –7 V –5 V RL* 800 1600 3200 ID(on) 12 mA 6 mA 3 mA RL OUT VGS(H) *Non-inductive Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz VDD Sampling Scope Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pF VGS(L) 1 k 51 VGS Scope 51 Siliconix S-52424—Rev. 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