J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2 −25 0.5 0.2 FEATURES D D D D Low Cutoff Voltage: J201 <1.5 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS APPLICATIONS D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System Sensitivity D High Quality Low-Level Signal Amplification D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultra High Input Impedance Pre-Amplifiers DESCRIPTION The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The J/SST201 is excellent for battery powered equipment and low current amplifiers. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. For applications information see AN102 and AN106. TO-226AA (TO-92) D 1 S 2 TO-236 (SOT-23) D 3 S G 1 G 2 3 Top View Top View J201 J202 J204 Document Number: 70233 S-40393—Rev. G, 15-Mar-04 SST201 (P1)* SST202 (P2)* SST204 (P4)* *Marking Code for TO-236 www.vishay.com 1 J/SST201 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST201 Parameter Typa Symbol Test Conditions Min V(BR)GSS IG = −1 mA , VDS = 0 V −40 VGS(off) VDS = 15 V, ID = 10 nA −0.3 Max J/SST202 Min Max J/SST204c Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current IDSS IGSS VDS = 15 V, VGS = 0 V VGS = −20 V, VDS = 0 V TA = 125_C 0.2 −2 −40 −1.5 −0.8 1 0.9 −100 −25 −4 −0.3 4.5 0.2 −100 −1 IG VDG = 10 V, ID = 0.1 mA −2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = −5 V 2 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 Common-Source Forward Transconductance gfs VDS = 15 V, VGS = 0 V f = 1 kHz Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en V −2 3 mA −100 pA nA pA V Dynamic VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 0.5 2 0.5 mS 4.5 pF 1.3 6 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves. www.vishay.com 1 nV⁄ √Hz NPA, NH Document Number: 70233 S-40393—Rev. G, 15-Mar-04 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 4 6 3 gfs IDSS 4 2 2 1 0 1500 −1 −2 −3 −4 IG @ ID = 500 mA ID = 100 mA 1 nA TA = 125_C IGSS @ 125_C 100 pA ID = 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 0 −5 0 15 VDG − Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 2 10 gos 1200 8 6 900 rDS 600 4 300 2 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz gfs − Forward Transconductance (mS) VGS(off) = −1.5 V 0 0 0 −1 −2 −3 −4 TA = −55_C 1.2 25_C 0.8 125_C 0.4 0 −5 0.01 0.1 VGS(off) = −0.7 V 1 ID − Drain Current (mA) Output Characteristics 400 VDS = 10 V f = 1 kHz 1.6 VGS(off) − Gate-Source Cutoff Voltage (V) Output Characteristics 2 VGS(off) = −1.5 V VGS = 0 V 360 1.6 ID − Drain Current (mA) ID − Drain Current (mA) 30 VGS(off) − Gate-Source Cutoff Voltage (V) gos − Output Conductance (mS) rDS(on) − Drain-Source On-Resistance ( Ω ) 10 nA IG − Gate Leakage (A) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 8 Gate Leakage Current 5 gfs − Forward Transconductance (mS) IDSS − Saturation Drain Current (mA) 10 −0.1 V 240 −0.2 V 160 −0.3 V 80 1.2 −0.3 V 0.8 −0.6 V 0.4 −0.4 V −0.5 V VGS = 0 V 0 −0.9 V −1.2 V 0 0 4 8 12 VDS − Drain-Source Voltage (V) Document Number: 70233 S-40393—Rev. G, 15-Mar-04 16 20 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) www.vishay.com 3 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 500 VGS(off) = −0.7 V VGS(off) = −1.5 V VDS = 10 V ID − Drain Current (mA) TA = −55_C 300 25_C 200 125_C 100 TA = −55_C 1.2 25_C 0.8 0.4 0 125_C 0 0 −0.1 −0.2 −0.3 −0.4 0 −0.5 −0.4 VGS − Gate-Source Voltage (V) VDS = 10 V f = 1 kHz 1.2 TA = −55_C 25_C 0.9 0.6 125_C 0.3 −1.6 −2 VGS(off) = −1.5 V VDS = 10 V f = 1 kHz 3.2 2.4 TA = −55_C 25_C 1.6 0.8 125_C 0 0 0 −0.1 −0.2 −0.3 −0.4 0 −0.5 VGS − Gate-Source Voltage (V) 120 RL + Assume VDD = 15 V, VDS = 5 V 10 V ID 80 −0.8 −1.2 −1.6 −2 On-Resistance vs. Drain Current 2000 rDS(on) − Drain-Source On-Resistance ( Ω ) 160 g fs R L AV + 1 ) R g L os −0.4 VGS − Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current 200 AV − Voltage Gain −1.2 Transconductance vs. Gate-Source Voltage 4 gfs − Forward Transconductance (mS) gfs − Forward Transconductance (mS) VGS(off) = −0.7 V −0.8 VGS − Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 1.5 VGS(off) = −0.7 V −1.5 V 40 0 1600 VGS(off) = −0.7 V 1200 800 −1.5 V 400 0 0.01 0.1 ID − Drain Current (mA) www.vishay.com 4 VDS = 10 V 1.6 400 ID − Drain Current (mA) Transfer Characteristics 2 1 0.01 0.1 1 ID − Drain Current (mA) Document Number: 70233 S-40393—Rev. G, 15-Mar-04 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 Crss − Reverse Feedback Capacitance (pF) f = 1 MHz Ciss − Input Capacitance (pF) 8 6 VDS = 0 V 4 10 V 2 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 −4 −8 −12 −16 −20 0 −4 VGS − Gate-Source Voltage (V) Output Conductance vs. Drain Current 3 20 −16 −20 VDS = 10 V Hz 2.4 1.8 TA = −55_C 0.8 −12 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V f = 1 kHz en − Noise Voltage nV / gos − Output Conductance (µS) VGS(off) = −1.5 V −8 VGS − Gate-Source Voltage (V) 25_C 0.4 16 ID @ 100 mA 12 8 VGS = 0 V 4 125_C 0 0 0.01 0.1 1 10 100 ID − Drain Current (mA) VGS(off) = −0.7 V VGS(off) = −1.5 V VGS = 0 V 0.8 ID − Drain Current (mA) ID − Drain Current (µA) 100 k Output Characteristics 1.0 240 −0.1 180 −0.2 120 −0.3 −0.5 60 10 k f − Frequency (Hz) Output Characteristics 300 1k VGS = 0 V 0.6 −0.3 0.4 −0.6 0.2 −0.4 −0.9 −1.2 0 0 0 0.1 0.2 0.3 VDS − Drain-Source Voltage (V) Document Number: 70233 S-40393—Rev. G, 15-Mar-04 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 VDS − Drain-Source Voltage (V) www.vishay.com 5