J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: J105 < 3 Fast Switching—tON: 14 ns Low Leakage: 10 pA Low Capacitance: 20 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters DESCRIPTION The J105/106/107 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. rDS(on) <3 is guaranteed for the J105 making this device the lowest of any commercially available JFET. The low cost TO-226AA (TO-92) plastic package is available in a wide range of tape-and-reel options (see Packaging Information). For similar products in TO-206AC (TO-52) packaging, see the U290/291 data sheet. TO-226AA (TO-92) D 1 S 2 G 3 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70230 S-04028—Rev. D, 04-Jun-01 Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 7-1 J105/106/107 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J105 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = –1 A , VDS = 0 V –35 –25 VGS(off) VDS = 5 V, ID = 1 A J106 Max Min J107 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Operating Currentb Drain Cutoff Current –25 V IDSS IGSS IG ID(off) –4.5 VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V Gate Reverse Current –25 TA = 125_C 500 –0.02 VDG = 10 V, ID = 25 mA –0.01 0.01 TA = 125_C rDS(on) VGS = 0 V, ID = 1 mA Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V –2 –6 200 –0.5 –4.5 100 mA –3 –3 –3 3 3 3 3 6 8 –10 VDS = 5 V, VGS = –10 V Drain-Source On-Resistance –10 nA 5 0.7 V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos 55 VDS = 10 V, ID = 25 mA f = 1 kHz rds(on) VGS = 0 V, ID = 0 mA f = 1 kHz Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V f = 1 MHz Common-Source Reverse Transfer Capacitance Crss en Drain-Source On-Resistance Equivalent Input Noise Voltage mS 5 3 6 8 120 160 160 160 VDS = 0 V, VGS = –10 V f = 1 MHz 20 35 35 35 VDG = 10 V, ID = 25 mA f = 1 kHz 3 pF nV⁄ √Hz Switching td(on) 6 Turn-On Time tr Turn-Off Time td(off) VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. www.vishay.com 7-2 8 ns 5 9 NVA Document Number: 70230 S-04028—Rev. D, 04-Jun-01 J105/106/107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS 6 1.2 IDSS 4 0.8 2 0.4 0 0 0 –2 –6 –4 –8 rDS(on) – Drain-Source On-Resistance ( Ω ) 1.6 IDSS – Saturation Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 10 V, VGS = 0 V 8 On-Resistance vs. Drain Current 20 2 .0 10 TA = 25_C 16 VGS(off) = –3 V 12 8 –5 V 4 –8 V 0 –10 10 100 VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA) On-Resistance vs. Temperature Output Characteristics 500 10 ID = 10 mA rDS changes X 0.7%/_C VGS(off) = –5 V VGS = 0 V 400 8 6 ID – Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( Ω ) 1000 VGS(off) = –3 V –5 V 4 –8 V 2 –0.5 V 300 –1.0 V –1.5 V 200 –2.0 V –2.5 V 100 –3.0 V 0 –55 0 –35 –15 5 25 45 65 85 105 125 2 4 6 8 10 VDS – Drain-Source Voltage (V) TA – Temperature (_C) Turn-On Switching Turn-Off Switching 20 td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = –10 V 16 Switching Time (ns) Switching Time (ns) tr approximately independent of ID VDD = 1.5 V, RG = 50 VGS(L) = –10 V tr td(on) @ ID = 30 mA 8 4 12 td(off) 8 tf VGS(off) = –3 V 4 td(on) @ ID = 10 mA VGS(off) = –8 V 0 0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) Document Number: 70230 S-04028—Rev. D, 04-Jun-01 –10 0 10 20 30 40 50 ID – Drain Current (mA) www.vishay.com 7-3 J105/106/107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current 200 150 VGS(off) = –5 V gfs – Forward Transconductance (mS) VDS = 0 V f = 1 MHz C (pF) 120 90 Ciss 60 Crss 30 0 100 TA = –55_C 25_C 10 125_C 1 0 –4 –8 –12 –16 –20 1 10 VGS – Gate-Source Voltage (V) Output Conductance vs. Drain Current Noise Voltage vs. Frequency 100 VGS(off) = –5 V VDS = 10 V f = 1 kHz (nV ⁄ √ Hz ) VDG = 10 V TA = –55_C 25_C 1 en – Noise Voltage gos – Output Conductance (mS) 10 125_C 0.1 10 ID = 10 mA 1 1 10 100 10 100 1k ID – Drain Current (mA) 300 100 nA TA = 125_C gfs and gos @ VDS = 10 V VGS = 0 V, f = 1 kHz 100 mA gfs 18 gos 12 140 6 100 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) www.vishay.com 0 –10 10 nA IGSS @ 125_C IG – Gate Leakage 24 gos – Output Conductance (mS) 260 180 100 k Gate Leakage Current 30 220 10 k f – Frequency (Hz) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage gfs – Forward Transconductance (mS) 100 ID – Drain Current (mA) 20 7-4 VDS = 10 V f = 1 kHz 25 mA 1 nA 100 mA 100 pA 25 mA TA = 25_C IGSS @ 25_C 10 pA 1 pA 0 4 8 12 16 20 VDG – Drain-Gate Voltage (V) Document Number: 70230 S-04028—Rev. D, 04-Jun-01 J105/106/107 Vishay Siliconix VDD SWITCHING TIME TEST CIRCUIT VGS(L) J105 J106 J107 –12V –7V –5V RL* ID(on) 28 mA 27 mA 26 mA Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz OUT VGS(H) *Non-inductive Input Pulse RL Sampling Scope Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pF VGS(L) 1 k 51 VIN Scope 51 Document Number: 70230 S-04028—Rev. D, 04-Jun-01 www.vishay.com 7-5