2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 −0.6 to −1.8 −40 70 30 4118 −1 to −3 −40 80 80 4119 −2 to −6 −40 100 200 FEATURES D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS APPLICATIONS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals D High-Impedance Transducer Amplifiers D Smoke Detector Input D Infrared Detector Amplifier D Precision Test Equipment DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. TO-206AF (TO-72) TO-226AA (TO-92) S C 1 The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). D TO-236 (SOT-23) 1 4 D S 3 S 2 3 D G G Top View 2N4117A 2N4118A 2N4119A 1 2 G 2 3 Top View PN4117A PN4118A PN4119A Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236 For applications information see AN105. Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com 1 2N/PN/SST4117A Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipation (case 25_C) : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C Notes a. Derate 2 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4117 Parameter 4118 4119 Symbol Test Conditions Typa Min V(BR)GSS IG = −1 mA , VDS = 0 V −70 −40 VGS(off) VDS = 10 V, ID = 1 nA −0.6 −1.8 −1 −3 −2 −6 VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 mA Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current IDSS VGS = −20 V VDS = 0 V G t Reverse Gate R Current C t IGSS VGS = −10 V VDS = 0 V TA = 100_C Gate Operating Currentb −40 V −0.2 −1 −1 −1 pA −0.4 −2.5 −2.5 −2.5 nA 2N VGS = −20 V VDS = 0 V TA = 150_C VGS = −10 V VDS = 0 V −40 PN −0.2 −1 −1 −1 SST −0.2 −10 −10 −10 PN/SST −0.03 −2.5 −2.5 −2.5 IG VDG = 15 V, ID = 30 mA −0.2 Drain Cutoff Currentb ID(off) VDS = 10 V, VGS = −8 V 0.2 Gate-Source Forward Voltageb VGS(F) IG = 1 mA , VDS = 0 V 0.7 pA nA pA V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss i Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltageb en VDS = 10 V VGS = 0 V f = 1 MHz 2N/PN 1.2 SST 1.2 2N/PN 0.3 SST 0.3 VDS = 10 V, VGS = 0 V f = 1 kHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. This parameter not registered with JEDEC. www.vishay.com 2 70 VDS = 10 V, VGS = 0 V f = 1 kHz 15 210 80 250 100 330 3 5 10 3 3 3 1.5 1.5 1.5 mS pF nV⁄ √Hz NT Document Number: 70239 S-41231—Rev. G, 28-Jun-04 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 300 800 240 180 600 gfs 120 400 IDSS 200 60 −1 −2 −3 −4 VGS(off) − Gate-Source Cutoff Voltage (V) 15 0.1 pA 200 3 6 2 rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 1 0 gos − Output Conductance (µS) 4 0 −1 −2 IGSS @ 25_C 6 30 Common-Source Forward Transconductance vs. Drain Current −3 −4 160 TA = −55_C 120 25_C 125_C 80 40 VDS = 10 V f = 1 kHz 0 −5 0.01 0.1 VGS(off) − Gate-Source Cutoff Voltage (V) 1 ID − Drain Current (mA) Output Characteristics Output Characteristics 100 500 VGS(off) = −0.7 V VGS(off) = −2.5 V 80 400 VGS = 0 V ID − Drain Current (µA) ID − Drain Current (µA) 12 18 24 VDG − Drain-Gate Voltage (V) VGS(off) = −2.5 V 9 0 10 mA TA = 25_C 5 rDS 3 100 mA 0 gos 12 IGSS @ 125_C 10 pA −5 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 mA TA = 125_C 1 pA gfs − Forward Transconductance (µS) 0 rDS(on) − Drain-Source On-Resistance (kW) 100 pA 0 0 100 mA VGS(off) = −2.5 V IG − Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz Gate Leakage Current 1 nA gfs − Forward Transconductance (µS) IDSS − Saturation Drain Current (µA) 1000 −0.1 V 60 −0.2 V 40 −0.3 V −0.4 V 20 −0.5 V VGS = 0 V 300 −0.5 V 200 −1.0 V 100 −1.5 V −2.0 V 0 0 0 4 8 12 VDS − Drain-Source Voltage (V) Document Number: 70239 S-41231—Rev. G, 28-Jun-04 16 20 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) www.vishay.com 3 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 100 VDS = 10 V VGS(off) = −0.7 V gfs − Forward Transconductance (µS) VGS(off) = −0.7 V ID − Drain Current (µA) 80 60 TA = 125_C 40 25_C 20 −55_C 0 160 −0.2 −0.4 −0.8 −0.6 VGS − Gate-Source Voltage (V) TA = −55_C 25_C 120 80 125_C 40 −1.0 0 Transfer Characteristics VGS(off) = −2.5 V VDS = 10 V 400 TA = −55_C 300 25_C 200 100 125_C 0 −1.0 VGS(off) = −2.5 V VDS = 10 V f = 1 kHz 240 TA = −55_C 180 25_C 120 125_C 60 0 0 −1 −2 −3 −4 −5 0 −1 −2 −3 −4 VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current Common-Source Input Capacitance vs. Gate-Source Voltage −5 2.0 100 g fs R L f = 1 MHz AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 1.6 Ciss − Input Capacitance (pF) 80 AV − Voltage Gain −0.2 −0.4 −0.6 −0.8 VGS − Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 300 gfs − Forward Transconductance (µS) 500 10 V ID VGS(off) = −0.7 V 40 20 −2.5 V VDS = 0 V 1.2 10 V 0.8 0.4 0 0 0.01 0.1 ID − Drain Current (mA) www.vishay.com 4 VDS = 10 V f = 1 kHz 0 0 ID − Drain Current (µA) Transconductance vs. Gate-Source Voltage 200 1 0 −4 −8 −12 −16 −20 VGS − Gate-Source Voltage (V) Document Number: 70239 S-41231—Rev. G, 28-Jun-04 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 0.5 200 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 0.4 Hz 160 0.3 en − Noise Voltage nV / Crss − Reverse Feedback Capacitance (pF) f = 1 MHz VDS = 0 V 0.2 10 V 0.1 ID = 10 mA 120 80 VGS = 0 V 40 0 0 0 −4 −8 −12 −16 −20 100 k 10 100 VGS − Gate-Source Voltage (V) On-Resistance vs. Drain Current 20 rDS(on) − Drain-Source On-Resistance ( Ω ) gos − Output Conductance (µS) VGS(off) = −2.5 V TA = −55_C 25_C 1 10 k f − Frequency (Hz) Output Conductance vs. Drain Current 2 1k 125_C VDS = 10 V f = 1 kHz VGS(off) = −0.7 V 16 12 8 −2.5 V 4 TA = 25_C 0 0 0.01 0.1 ID − Drain Current (mA) Document Number: 70239 S-41231—Rev. G, 28-Jun-04 1 0.01 0.1 1 ID − Drain Current (mA) www.vishay.com 5