J/SST174 Series P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 Product Summary Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176 1 to 4 250 –10 25 J/SST177 0.8 to 2.25 300 –10 25 Features Benefits Applications Low On-Resistance: J174 <85 Fast Switching—tON: 25 ns Low Leakage: –10 pA Low Capacitance: 5 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters Description The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D TO-236 (SOT-23) 1 D G 3 2 S S 1 G 2 3 Top View Top View J174 J175 J176 J177 SST174 (S4)* SST175 (S5)* SST176 (S6)* SST177 (S7)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70257. Applications information may also be obtained via FaxBack, request document #70597. Siliconix P-37653—Rev. D, 25-Jul-94 1 J/SST174 Series Absolute Maximum Ratings Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa for J/SST174 and J/SST175 Limits J/SST174 J/SST175 Test Conditions Typb Min V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 VGS(off) VDS = –15 V, ID = –10 nA 5 10 3 6 Saturation Drain Currentc IDSS VDS = –15 V, VGS = 0 V –20 –135 –7 –70 Gate Reverse Current IGSS Parameter Symbol Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current Drain Cutoff Current IG ID(off) VGS = 20 V, VDS = 0 V TA = 125_C 0.01 0.01 VDS = –15 V, VGS = 10 V –0.01 Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V V 1 1 –1 –1 85 125 mA 5 VDG = –15 V, ID = –1 mA TA = 125_C 30 nA –5 W –0.7 V 4.5 mS 20 mS Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance VDSS = –15 V, ID = –1 mA f = 1 kH kHz rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20 85 Common-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V f = 1 MHz 5 Equivalent Input Noise Voltage en VDG = –10 V, ID = –1 mA f = 1 kHz 20 W 125 pF nV⁄ √Hz Switching Turn-On Time Turn-Off Time td(on) tr td(off) 10 VGS( GS(L)) = 0 V, VGS( GS(H)) = 10 V S Switching See S it hi Circuit Ci it tf Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 ms duty cycle 3%. 2 15 ns 10 20 PSCIA Siliconix P-37653—Rev. D, 25-Jul-94 J/SST174 Series Specificationsa for J/SST176 and J/SST177 Limits J/SST176 Parameter Test Conditions Typb Min V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 VGS(off) VDS = –15 V, ID = –10 nA IDSS VDS = –15 V, VGS = 0 V Symbol J/SST177 Max Min Max 1 4 0.8 2.25 –2 –35 –1.5 –20 Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current IGSS IG VGS = 20 V, VDS = 0 V TA = 125_C 0.01 30 1 1 –1 –1 250 300 V mA 5 VDG = –15 V, ID = –1 mA 0.01 VDS = –15 V, VGS = 10 V –0.01 nA Drain Cutoff Current ID(off) Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V gfs VDS = –15 V, ID = –1 mA f = 1 kHz 4.5 mS TA = 125_C –5 W Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance gos mS 20 rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 250 Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20 Common-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V f = 1 MHz 5 Equivalent Input Noise Voltage en VDG = –10 V, ID = –1 mA f = 1 kHz 20 W 300 pF nV⁄ √Hz Switching Turn-On Time Turn-Off Time td(on) tr td(off) 10 VGS( GS(L)) = 0 V, VGS( GS(H)) = 10 V S Switching S it hi Circuit Ci it See tf Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 ms duty cycle 3%. Siliconix P-37653—Rev. D, 25-Jul-94 15 ns 10 20 PSCIA 3 J/SST174 Series Typical Characteristics On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage –100 –80 rDS 120 –60 –40 80 40 –20 rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V 0 0 0 2 4 6 8 250 gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz 15 200 gfs 12 9 100 6 50 3 10 0 2 VGS(off) – Gate-Source Cutoff Voltage (V) VGS = 0 V I D – Drain Current (mA) –20 0.5 V –15 1.0 V –10 1.5 V –5 2.0 V 0 TA = 25_C 200 VGS(off) = 1.5 V 150 3V 100 5V 50 –4 –8 –12 –16 –20 –1 –10 VDS – Drain-Source Voltage (V) rDS(on) – Drain-Source On-Resistance ( W ) 300 VGS = 0 V 1.5 V 0.5 V –1.6 –100 ID – Drain Current (mA) Output Characteristics –2 I D – Drain Current (mA) 0 10 0 0 1.0 V –1.2 2.0 V –0.8 –0.4 VGS(off) = 3 V On-Resistance vs. Temperature ID = –1 mA rDS changes X 0.7%/_C 240 180 VGS(off) = 1.5 V 3V 120 5V 60 0 0 0 –0.1 –0.2 –0.3 –0.4 VDS – Drain-Source Voltage (V) 4 8 On-Resistance vs. Drain Current 250 rDS(on) – Drain-Source On-Resistance ( W ) VGS(off) = 3 V 6 4 VGS(off) – Gate-Source Cutoff Voltage (V) Output Characteristics –25 150 gos g – Output Conductance ( mS) 160 18 g fs – Forward Transconductance (mS) IDSS I DSS – Saturation Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( W ) 200 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage –0.5 –55 –35 –15 5 25 45 65 85 105 125 TA – Temperature (_C) Siliconix P-37653—Rev. D, 25-Jul-94 J/SST174 Series Typical Characteristics (Cont’d) Turn-On Switching 50 tr approximately independent of ID VDD = –10 V, RG = 220 VGS(H) = 10 V, VGS(L) = 0 V 40 Turn-Off Switching 20 tf VGS(off) = 1.5 V 16 30 tON @ ID = –5 mA Switching Time (ns) Switching Time (ns) 5V tON @ ID = –10 mA 20 10 12 td(off) VGS(off) = 1.5 V 8 5V 4 tr @ ID = –5 mA VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V 0 0 0 1 2 3 4 0 5 –3 VGS(off) – Gate-Source Cutoff Voltage (V) –15 ID = –1 mA 10 nA 24 –10 mA I G – Gate Leakage Capacitance (pF) –12 Gate Leakage Current 100 nA VDS = 0 V f = 1 MHz 18 Ciss 12 Crss 6 TA = 125_C 1 nA IGSS @ 125_C 100 pA –10 mA 10 pA TA = 25_C 1 pA –1 mA IGSS @ 25_C 0.1 pA 0 0 4 8 12 16 0 20 VGS – Gate-Source Voltage (V) e n – Noise Voltage TA = –55_C 25_C –16 –30 –40 –50 VDS = –15 V –32 –24 –20 Noise Voltage vs. Frequency 100 (nV / √ Hz) VGS(off) = 3 V –10 VDG – Drain-Gate Voltage (V) Transfer Characteristics –40 I D – Drain Current (mA) –9 ID – Drain Current (mA) Capacitance vs. Gate-Source Voltage 30 –6 –8 125_C 0 ID = –0.1 mA –1 mA 10 VDS = –10 V 1 0 1 2 3 4 VGS – Gate-Source Voltage (V) Siliconix P-37653—Rev. D, 25-Jul-94 5 10 100 1k 10 k 100 k f – Frequency (Hz) 5 J/SST174 Series Switching Time Test Circuit VDD VGG 174 175 176 177 –10 V –6 V –6 V –6 V VGG 20 V 12 V 8V 5V RL* 560 W 750 W 1800 W 5600 W RG* 100 W 220 W 390 W 390 W ID(on) –15 mA –7 mA –3 mA –1 mA *Non-inductive Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VDD RL 1.2 kW VGS(H) VGS(L) 0.1 mF RG 7.5 kW 51 W 1.2 kW Sampling Scope 51 W 51 W See Typical Characteristics curves for changes. 6 Siliconix P-37653—Rev. D, 25-Jul-94