ETC 2SA1310S

Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
Unit: mm
3.0±0.2
4.0±0.2
■ Features
■ Absolute Maximum Ratings
marking
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–55
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–200
mA
Collector current
IC
–100
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
1
2
3
2.0±0.2
●
15.6±0.5
●
Allowing supply with the radial taping.
Low noise voltage NV.
High foward current transfer ratio hFE.
Optimum for high-density mounting.
0.7±0.1
●
+0.2
0.45–0.1
●
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
(Ta=25˚C)
Symbol
Parameter
Conditions
min
typ
max
Unit
ICBO
VCB = –10V, IE = 0
– 0.1
µA
ICEO
VCE = –10V, IB = 0
–1
µA
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–55
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
Forward current transfer ratio
hFE*
VCE = –5V, IC = –2mA
180
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
Base to emitter voltage
VBE
VCE = –1V, IC = –30mA
Transition frequency
fT
VCB = –5V, IE = 2mA, f = 200MHz
Collector cutoff current
Noise voltage
*h
FE
VCE = –10V, IC = –1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
V
700
– 0.6
V
–1
V
200
MHz
150
mV
Rank classification
Rank
R
S
T
hFE
180 ~ 360
260 ~ 520
360 ~ 700
1
2SA1310
Transistor
IC — VCE
–100
450
–90
400
–80
300
250
200
150
100
–70
IB=–200µA
–60
–180µA
–160µA
–140µA
–120µA
–100µA
–50
–40
–30
–80µA
–60µA
–20
–10
60
80 100 120 140 160
–2
–10
–3
–1
Ta=75˚C
– 0.1
–25˚C
– 0.03
–3
–10
–6
–10
–12
–30
25˚C
300
–25˚C
200
100
–1
–3
–10
–30
–100
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
VCE=–10V
GV=80dB
Function=FLAT
100
Noise voltage NV (mV)
6
80
Rg=100kΩ
60
22kΩ
40
5kΩ
20
1
–10
–30
–100
Collector to base voltage VCB (V)
–1.6
–2.0
280
240
200
160
120
80
0
– 0.01
– 0.03
– 0.1
– 0.3
Collector current IC (mA)
0
0.1
0.3
1
3
10
30
Emitter current IE (mA)
NV — IC
120
7
–1.2
40
Collector current IC (mA)
8
– 0.8
VCB=–5V
Ta=25˚C
Ta=75˚C
400
Cob — VCB
–3
– 0.4
Base to emitter voltage VBE (V)
320
0
– 0.1 – 0.3
–100
10
0
–1
0
fT — IE
500
Collector current IC (mA)
9
–8
VCE=–5V
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
–30
–1
–4
600
IC/IB=10
– 0.01
– 0.1 – 0.3
–40
hFE — IC
–100
25˚C
–60
Collector to emitter voltage VCE (V)
VCE(sat) — IC
– 0.3
–80
0
0
Ambient temperature Ta (˚C)
–25˚C
–20
Transition frequency fT (MHz)
40
Ta=75˚C
–20µA
0
20
25˚C
–100
–40µA
50
0
Collector output capacitance Cob (pF)
VCE=–5V
Collector current IC (mA)
350
0
2
IC — VBE
–120
Ta=25˚C
Collector current IC (mA)
Collector power dissipation PC (mW)
PC — Ta
500
–1
100
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2001 MAR