Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 3.0±0.2 4.0±0.2 ■ Features ■ Absolute Maximum Ratings marking (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 2.0±0.2 ● 15.6±0.5 ● Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –55 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE* VCE = –5V, IC = –2mA 180 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Base to emitter voltage VBE VCE = –1V, IC = –30mA Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz Collector cutoff current Noise voltage *h FE VCE = –10V, IC = –1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT V 700 – 0.6 V –1 V 200 MHz 150 mV Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 2SA1310 Transistor IC — VCE –100 450 –90 400 –80 300 250 200 150 100 –70 IB=–200µA –60 –180µA –160µA –140µA –120µA –100µA –50 –40 –30 –80µA –60µA –20 –10 60 80 100 120 140 160 –2 –10 –3 –1 Ta=75˚C – 0.1 –25˚C – 0.03 –3 –10 –6 –10 –12 –30 25˚C 300 –25˚C 200 100 –1 –3 –10 –30 –100 IE=0 f=1MHz Ta=25˚C 5 4 3 2 VCE=–10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 6 80 Rg=100kΩ 60 22kΩ 40 5kΩ 20 1 –10 –30 –100 Collector to base voltage VCB (V) –1.6 –2.0 280 240 200 160 120 80 0 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (mA) 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) NV — IC 120 7 –1.2 40 Collector current IC (mA) 8 – 0.8 VCB=–5V Ta=25˚C Ta=75˚C 400 Cob — VCB –3 – 0.4 Base to emitter voltage VBE (V) 320 0 – 0.1 – 0.3 –100 10 0 –1 0 fT — IE 500 Collector current IC (mA) 9 –8 VCE=–5V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 –1 –4 600 IC/IB=10 – 0.01 – 0.1 – 0.3 –40 hFE — IC –100 25˚C –60 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –80 0 0 Ambient temperature Ta (˚C) –25˚C –20 Transition frequency fT (MHz) 40 Ta=75˚C –20µA 0 20 25˚C –100 –40µA 50 0 Collector output capacitance Cob (pF) VCE=–5V Collector current IC (mA) 350 0 2 IC — VBE –120 Ta=25˚C Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 500 –1 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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