Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Collector to base voltage 2SB1219 Collector to emitter voltage 2SB1219 Symbol Rating Unit VCBO −30 V 0 to 0.1 Parameter 10° −60 2SB1219A −25 VCEO V 1: Base 2: Emitter 3: Collector −50 2SB1219A Emitter to base voltage VEBO −5 V Peak collector current ICP −1 A Collector current IC −500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C EIAJ: SC-70 S-Mini Type Package Marking Symbol • 2SB1219 : C • 2SB1219A : D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SB1219 Collector to emitter voltage 2SB1219 Min ICBO VCB = −20 V, IE = 0 VCBO IC = −10 µA, IE = 0 VCEO IC = −2 mA, IB = 0 VEBO IE = −10 µA, IC = 0 −5 Collector cutoff current Collector to base voltage Conditions Typ Max Unit − 0.1 µA −30 V −60 2SB1219A −25 V −50 2SB1219A Emitter to base voltage V VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 Collector to emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.6 V Base to emitter saturation voltage *1 VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V VCB = −10 V, IE = 50 mA, f = 200 MHz 200 Forward current transfer ratio *1 hFE1 Transition frequency fT Collector output capacitance Cob *2 VCB = −10 V, IE = 0, f = 1 MHz 340 6 MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q R S No-rank 85 to 170 120 to 240 170 to 340 85 to 340 Marking 2SB1219 CQ CR CS C symbol 2SB1219A DQ DR DS D Product of no-rank is not classified and have no indication for rank. 1 2SB1219, 2SB1219A Transistors PC Ta IC VCE −500 −400 120 −400 −1 mA −300 −200 −100 −100 40 80 120 0 160 −4 0 −10 −3 Ta = 75°C 25°C −100 Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 0 −20 −10 −3 25°C Ta = −25°C −1 −3 −10 75°C − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 200 160 120 80 40 2 3 5 10 20 30 50 Emitter current IE (mA) 100 Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C −3 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −10 16 12 8 4 0 −1 −2 −3 −5 −10 −1 −3 −10 Collector current IC (A) VCER RBE IE = 0 f = 1 MHz Ta = 25°C 20 −10 400 Cob VCB 24 −8 500 −20−30 −50 −100 Collector to base voltage VCB (V) −120 Collector to emitter voltage VCER (V) fT IE 240 −6 VCE = −10 V Collector current IC (A) Collector current IC (A) 1 −1 −4 600 − 0.03 − 0.03 −1 −2 Base current IB (mA) IC / IB = 10 −30 − 0.1 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 0 hFE IC − 0.3 −25°C − 0.1 −16 VBE(sat) IC −30 − 0.3 −12 Collector to emitter voltage VCE (V) VCE(sat) IC −1 −8 Forward current transfer ratio hFE 0 −100 Collector to emitter saturation voltage VCE(sat) (V) −500 −2 mA −200 40 −600 −3 mA −300 80 Ambient temperature Ta (°C) Transition frequency fT (MHz) −9 mA −8 mA −7 mA –6 mA −5 mA −4 mA Collector current IC (mA) IB = −10 mA 160 VCE = −10 V Ta = 25°C −700 Collector current IC (mA) Collector power dissipation PC (mW) Ta = 25°C −600 0 −800 −700 200 0 2 IC IB −800 240 IC = −2 mA Ta = 25°C −100 −80 −60 2SB1219A −40 2SB1219 −20 0 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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