Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 ■ Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −5 V Peak collector current ICP −5 A Collector current IC −3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 1 2 3 2.05±0.2 0.5±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter 0.8 C 1 : Emitter 2 : Collector 3 : Base MT-3 (MT3 Type Package) 2.5±0.2 2.5±0.2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Max Unit ICES VCE = −60 V, VBE = 0 −200 µA ICEO VCE = −30 V, IB = 0 −300 µA IEBO VEB = −5 V, IC = 0 −1 mA Collector to emitter voltage VCEO IC = −30 mA, IB = 0 −60 Forward current transfer ratio hFE1 * VCE = −4 V, IC = −1 A 40 hFE2 VCE = −4 V, IC = −3 A 10 Collector to emitter saturation voltage VCE(sat) IC = −3 A, IB = − 0.375 A −1.8 Base to emitter saturation voltage VBE(sat) Collector cutoff current Emitter cutoff current Conditions Min Typ V 250 V VCE = −4 V, IC = −3 A −1.2 V fT VCB = −5 V, IE = 0.1 A, f = 200 MHz 270 MHz Turn-on time ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs Storage time tstg 1.2 µs Fall time tf 0.3 µs Transition frequency Note) *: Rank classification Rank P Q R hFE1 40 to 90 70 to 150 120 to 250 1 2SB1416 Power Transistors PC T a IC VCE 120 Ta=25˚C 0.8 0.4 –7mA 0.8 –6mA –5mA 0.6 –4mA 0.4 –3mA –2mA 80 60 40 20 –1mA 0 20 40 60 0 0 80 100 120 140 160 Ambient temperature Ta (˚C) 2 4 8 10 0 Ta=75˚C Ta=25˚C Ta=–25˚C 0.01 0.001 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 1000 1 Collector current IC (A) 10 100 150 100 ICP t=1ms t=10ms –1 DC –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 0 –0.01 –0.03 –0.1 –0.3 –100 Collector to emitter voltage VCE (V) –1 –3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) –10 IC 50 104 Single pulse TC=25˚C Without heat sink 103 102 10 1 10–1 10–4 10–3 10–2 1.2 200 Collector current IC (mA) –30 1.0 VCB=–5V f=200MHz TC=25˚C 250 1000 Area of safe operation (ASO) –100 0.8 300 0 100 0.6 VCE=–4V Forward current transfer ratio hFE 0.1 10 0.4 fT I C 240 IC/IB=8 1 0.2 Base to emitter voltage VBE (V) hFE IC 1 –3 12 Collector to emitter voltage VCE (V) VCE(sat) IC 10 6 Transition frequency fT (MHz) 0 Collector current IC (A) –25˚C Ta=75˚C 0.2 0 2 100 Collector current IC (A) 1.2 VCE=–4V 25˚C IB=–8mA 1.0 1.6 Collector current IC (A) Collector power dissipation PC (W) Without heat sink Collector to emitter saturation voltage VCE(sat) (V) IC VBE 1.2 2.0 10–1 1 Time t (s) 10 102 103 104 –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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