Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 (2SB942) and 2SB0942A (2SB942A) Unit: mm ■ Features Parameter (TC=25˚C) Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to 2SD1267 Ratings V 80 60 VCEO emitter voltage 2SD1267A 0.7±0.1 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 Unit 60 VCBO 16.7±0.3 ■ Absolute Maximum Ratings 10.0±0.2 V 80 4.0 ● 14.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 Solder Dip ● 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SD1267 current 2SD1267A Collector cutoff 2SD1267 current 2SD1267A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SD1267 voltage 2SD1267A Forward current transfer ratio Conditions typ max 400 VCB = 80V, VBE = 0 400 VCE = 30V, IB = 0 700 VCE = 60V, IB = 0 700 VEB = 5V, IC = 0 1 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 70 15 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.4A Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 min VCB = 60V, VBE = 0 Base to emitter voltage *h 3 (TC=25˚C) Parameter Collector cutoff 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 5.08±0.5 1 IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V Unit µA µA mA V 80 250 2 1.5 V V 20 MHz 0.4 µs 1.2 µs 0.5 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1267, 2SD1267A PC — Ta IC — VCE (1) 40 30 20 (2) 10 8 TC=25˚C 100mA 4 80mA 60mA 40mA 3 30mA 2 20mA 10mA (3) (4) 6 TC=100˚C –25˚C 0.4 1.2 5 4 3 2 1 5mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 8 12 16 20 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 Transition frequency fT (MHz) TC=100˚C 1 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) 10 ICP t=1ms 10ms DC 0.3 0.01 1 3 10 30 2SD1267A 2SD1267 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 1 30 1 0.01 0.03 10 103 3 IC 100 Collector current IC (A) 100 30 300 3 1 0.01 0.03 10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=1MHz TC=25˚C 3000 1000 3 2.0 fT — IC VCE=4V Forward current transfer ratio hFE 10 1.6 10000 IC/IB=10 30 0.8 Base to emitter voltage VBE (V) 10000 100 Collector current IC (A) Collector current IC (A) 25˚C 1 0 2 VCE=4V 7 IB=150mA 5 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 6 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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