Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage 2SD2374 Symbol Rating Unit VCBO 60 V VCEO 60 2SD2374A 80 2SD2374A 1.4±0.2 1.6±0.2 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 80 6 V Peak collector current ICP 5 A Collector current IC 3 A PC 25 W TC = 25°C Ta = 25°C 0.55±0.15 2.54±0.30 5.08±0.50 1 VEBO 2.6±0.1 0.8±0.1 V Emitter to base voltage Collector power dissipation φ 3.2±0.1 15.0±0.5 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 2SD2374 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip ■ Features Parameter 4.6±0.2 9.9±0.3 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SD2374 Emitter cutoff current 2SD2374 ICES 2SD2374A ICEO 2SD2374A Conditions Min Max Unit VCE = 60 V, VBE = 0 200 µA VCE = 80 V, VBE = 0 200 VCE = 30 V, IB = 0 300 VCE = 60 V, IB = 0 300 Emitter cutoff current IEBO VEB = 6 V, IC = 0 Collector to emitter voltage VCEO IC = 30 mA, IB = 0 60 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage hFE1 * Typ 1 µA mA V VCE = 4 V, IC = 1 A 70 hFE2 VCE = 4 V, IC = 3 A 10 VBE VCE = 4 V, IC = 3 A 1.8 V IC = 3 A, IB = 0.375 A 1.2 V VCE(sat) 250 Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A, 0.5 µs Storage time tstg VCC = 50 V 2.5 µs Fall time tf 0.4 µs Note) *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 2SD2374, 2SD2374A Power Transistors PC T a IC VCE 8 7 5 28 (1) 24 20 16 12 8 IB=100mA 90mA 80mA 70mA 50mA 40mA 30mA 60mA 4 3 20mA 10mA 2 6 5 4 3 2 1 1 4 (2) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) IC 1 VCE=4V TC=25˚C 3000 1000 0.3 0.1 0.03 0.01 0.003 0.1 0.3 1 3 300 100 30 10 0.1 0.3 1 3 t=1ms 3 IC 10ms 1s 1 0.3 0.01 1 3 10 30 2SD2374A 2SD2374 0.1 0.03 100 300 30 10 3 1 1000 Collector to emitter voltage VCE (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) ICP VCE=10V f=10MHz TC=25˚C 0.1 0.01 0.03 10 103 10 (1) Without heat sink (2) With a 100 × 80 × 2mm Al heat sink 102 Ta=25˚C (1) (2) 10 1 10–1 10–2 10–4 1.2 0.3 Area of safe operation (ASO) 100 30 1.0 100 Collector current IC (A) Non repetitive pulse TC=25˚C 0.8 300 3 1 0.01 0.03 10 0.6 fT I C Transition frequency fT (MHz) Forward current transfer ratio hFE IC/IB=8 TC=25˚C 0.001 0.01 0.03 0.4 1000 10000 3 0.2 Base to emitter voltage VBE (V) hFE IC 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) 32 0 2 VCE=4V TC=25˚C TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2W) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE 6 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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