2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector peak current IC(peak) 3 A Collector power dissipation PC 0.75 W 10 W PC* 1 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SC1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 — — V IC = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 35 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 1 mA, IC = 0 Collector cutoff current ICBO — — 20 µA VCB = 35 V, IE = 0 60 — 320 VCE = 2 V, IC = 0.5 A hFE 20 — — VCE = 2 V, IC = 1.5 A (pulse test) Base to emitter voltage VBE — 0.93 1.5 V VCE = 2 V, IC = 1.5 A (pulse test) Collector to emitter saturation voltage VCE(sat) — 0.5 1.0 V IC = 2 A, IB = 0.2 A (pulse test) Gain bandwidth product fT — 180 — MHz VCE = 2 V, IC = 0.2 A DC current transfer ratio Note: hFE* 1 1. The 2SC1162 is grouped by hFE as follows. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Area of Safe Operation 5 0.75 TC = 25°C 0.6 1.0 W 0.2 10 0.4 2 = Collector current IC (A) IC(max)(DC Operation) PC Collector power dissipation PC (W) 0.8 0.5 0.2 0.1 0 2 50 100 150 Ambient temperature Ta (°C) 200 1 5 20 50 2 10 Collector to emitter voltage VCE (V) 2SC1162 Typical Output Characteristics Maximum Collector Dissipation Curve 16 TC = 25°C Collector current IC (A) Collector power dissipation PC (W) 2.0 12 8 4 20 17 1.6 15 1.2 12 10 0.8 8 6 4 0.4 2 mA IB = 0 0 50 100 150 200 Case temperature TC (°C) 0 2.0 280 25 TC = 75°C 0.2 –25 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to emitter voltage VBE (V) DC current transfer ratio hFE VCE = 2 V 1.0 0.5 1 3 4 2 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics Collector Current IC (A) 24 240 VCE = 2 V 200 160 TC = 75°C 120 80 25 –25 40 0 0.01 0.3 0.03 0.1 1.0 Collector current IC (A) 3.0 3 2SC1162 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 2SC1162 Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5