2SB765(K) Silicon PNP Triple Diffused Application Medium speed and power switching complementary pair with 2SD864(K) Outpline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 4 kΩ (Typ) 300 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –7 V Collector current IC –3 A Collector peak current IC(peak) –6 A 30 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C 2SB765(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage –120 — — V IC = –25 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –7 — — V IE = –50 mA, IC = 0 Collector cutoff current ICBO — — –100 µA VCB = –120 V, IE = 0 ICEO — — –10 µA VCE = –100 V, RBE = ∞ DC current transfer ratio hFE 1000 — 20000 Collector to emitter saturation voltage VCE(sat)1 — — –1.5 V IC = –1.5 A, IB = –3 mA* VCE(sat)2 — — –3.0 V IC = –3 A, IB = –30 mA* VBE(sat)1 — — –2.0 V IC = –1.5 A, IB = –3 mA* VBE(sat)2 — — –3.5 V IC = –3 A, IB = –30 mA* Turn on time ton — 0.8 — µs IC = –1.5 A, IB1 = –IB2 = –3 mA Storage time tstg — 3.0 — µs Fall time tf — 1.5 — µs Base to emitter saturation voltage Note: 1 VCE = –3 V, IC = –1.5 A* Maximum Collector Dissipation Curve 1 1 Area of Safe Operation 30 15 –3 IC (max) (Continuous) –1.0 –0.3 –0.1 –0.03 0 50 100 Case Temperature TC (°C) 150 1 µs –0.01 –1 100 µs s 1 m 0 ms 1 tion = era Op C) DC = 25° (T C Collector Current IC (A) –10 i C (peak) PW Collector power dissipation Pc (W) 1 1. Pulse test 45 2 1 Ta = 25°C 1 Shot pulse –3 –10 –30 –100 –300 –1,000 Collector to emitter Voltage VCE (V) 2SB765(K) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 30,000 TC = 25°C DC current transfer ratio hFE –8 –2.0 5W =2 Collector Current IC (A) Pc –10 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –6 –0.6 –4 –0.4 –2 –0.2 mA IB = 0 –0 0 VCE = –3 V 10,000 3,000 1,000 300 –0.1 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) tstg 3 VBE (sat) –1.0 VCE (sat) TC = 25°C lC/lB = 200 500 1.0 –0.5 –1.0 –2 –5 Collector current IC (A) –10 tf ton 0.3 0.1 0.03 –0.2 –0.1 –0.1 –0.2 –10 Switching Time vs. Collector Current –5 –0.5 –0.3 –1.0 –3 Collector current IC (A) 10 Switching time t (µs) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current –10 –2 °C 75 T C °C 25 °C 5 –2 = 0.01 –0.1 VCC = –30 V IC = 500 IB1 = –500 IB2 Ta = 25°C –0.3 –1.0 –3 Collector current IC (A) –10 3 2SB765(K) Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) 1-1,000 s 3 0 ms 1-1,00 1.0 0.3 0.1 0.03 Ta = 25°C 0.01 1 10 1 10 Time t 4 100 1,000 (s) 100 1,000 (ms) 2SB765(K) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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