2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec (typ) • Isolated package TO-3P•FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 6 V Collector current IC 12 A Collector peak current IC(peak) 24 A 50 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 800 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 mA, IC = 0 Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 DC current transfer ratio hFE1 8 — 35 VCE = 5 V, IC = 1 A DC current transfer ratio hFE2 5 — 9 VCE = 5 V, IC = 5 A Collector to emitter saturation voltage VCE(sat) — — 5 V IC = 7 A, IB = 1.8 A Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 7 A, IB = 1.8 A Fall time tf — 0.2 0.4 µsec ICP = 6 A, IB1 = 1.5 A, fH = 31.5 kHz 2 Symbol 2SC5251 Collector Power Dissipation Pc (W) Maximum Collector Power Dissipation Curve 80 60 40 20 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe Operation Collector Current I C (A) 25 (400 V, 24 A) 20 15 10 (600 V, 8 A) 5 I B2 = –1 A L = 180 µH duty <1% 0 (800 V, 3 A) (1500 V, 0.5mA) 800 1200 1600 2000 400 Collector to Emitter Voltage V CE (V) Typical Output Characteristics 50 W Collector Current = 5 2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A Pc I C (A) 10 0.2 A Tc = 25 °C IB=0 0 5 10 Collector to Emitter Voltage V CE (V) 3 2SC5251 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio h FE 100 50 75 °C 25 °C 20 10 Tc = –25 °C 5 2 1 0.1 VCE = 5 V 0.2 0.5 1 Collector Current 2 5 I C (A) 10 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 IC / I B= 4 2 1 25 °C 0.5 75 °C 0.2 0.1 0.05 0.1 Tc = –25 °C 0.2 0.5 1 2 5 Collector Current I C (A) 10 Base to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturetion Voltage V BE(sat) (V) 10 5 I C/ I B= 4 2 Tc = –25°C 1 0.5 75 °C 25 °C 0.2 0.1 4 0.2 0.5 1 2 5 Collector Current I C (A) 10 2SC5251 Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 Tc = 25 °C I C= 4 A 6A 8A 5 0 0.1 0.2 0.5 1 Base Current 2 5 I B (A) 10 Fall Time vs. Base Current 1.0 Fall Time t f (µs) 0.8 I CP = 6 A f H = 31.5 kHz 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Base Current I B1 (A) Storage Time vs. Base Current Storage Time t stg (µs) 10 8 I CP = 6 A f H = 31.5 kHz 6 4 2 0 0.4 0.8 1.2 1.6 2.0 Base Current I B1 (A) 5 2SC5251 When using this document, keep the following in mind: 1. 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