Transistors 2SC3932 Silicon NPN epitaxial planer type (0.425) Unit: mm For high-frequency amplification / oscillation / mixing 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 1 2 0.2±0.1 • High transition frequency fT • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: R ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = 100 µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 3 V 25 Forward current transfer ratio hFE VCB = 10 V, IE = −2 mA Base to emitter voltage VBE VCB = 10 V, IE = −2 mA 250 720 mV fT VCB = 10 V, IE = −15 mA, f = 200 MHz Common emitter reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz Crb VCE= 6 V, IC = 0, f = 1 MHz 0.8 pF Power gain PG VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB Transition frequency * 800 1 1 600 MHz 1.5 pF Note) *: Rank classification Rank fT (MHz) Marking symbol T S No-rank 800 to 1 400 1 000 to 1 600 800 to 1 600 RT RS R Product of no-rank is not classified and have no indication for rank. 1 2SC3932 Transistors PC Ta IC VCE 200 Ta = 25°C 20 120 80 40 80 120 200 µA 12 8 100 µA 4 50 µA 0 160 150 µA 2 4 6 8 10 12 14 16 18 60 Collector current IC (mA) 250 200 150 100 −25°C Ta = 75°C 30 20 10 1.2 1.6 0 2.0 0 Base to emitter voltage VBE (V) 0.4 0.8 1.6 Transition frequency fT (MHz) 10 1 000 1 Ta = 75°C 25°C 0.1 –25°C 800 600 400 200 0.03 0.3 1 3 10 160 Ta = 75°C 120 25°C −25°C 80 40 0.3 30 Collector current IC (mA) 100 0 − 0.1 − 0.3 −1 −3 1 3 10 30 100 Collector current IC (mA) Cre VCE 1 200 3 500 200 0 0.1 2.0 VCB = 10 V Ta = 25°C 1 400 30 0.01 0.1 1.2 1 600 400 VCE = 10 V fT I E IC / IB = 10 300 240 Base to emitter voltage VBE (V) VCE(sat) IC 100 200 hFE IC 40 50 0.3 100 Base current IB (µA) VCE = 10 V 25°C 50 300 0.8 0 Collector to emitter voltage VCE (V) VCE = 10 V Ta = 25°C 0.4 8 IC VBE 350 0 12 0 0 IB VBE 0 16 4 Forward current transfer ratio hFE 40 16 −10 −30 Emitter current IE (mA) −100 Common emitter reverse transfer capacitance Cre (pF) 0 250 µA Collector current IC (mA) 160 400 Base current IB (µA) VCE = 10 V Ta = 25°C 20 Ambient temperature Ta (°C) Collector to emitter saturation voltage VCE(sat) (V) 24 IB = 300 µA 0 2 IC IB 24 Collector current IC (mA) Collector power dissipation PC (mW) 240 2.4 IC = 1 mA f = 10.7 MHz Ta = 25°C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistors 2SC3932 Zrb IE PG IE 40 VCB = 10 V f = 2 MHz Ta = 25°C 100 60 40 Noise figure NF (dB) 80 VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C 10 30 25 20 15 8 6 4 10 2 20 5 0 − 0.1 − 0.2− 0.3 − 0.5 −1 −2 −3 −5 0 − 0.1 − 0.3 −10 bib gib −3 −10 −30 0 − 0.1 − 0.3 −100 600 500 300 200 −40 −50 0 10 20 30 40 50 300 500 600 −1.2 f = 900 MHz −2 mA IE = −5 mA −1.6 −2.0 −2.4 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 0 Reverse transfer conductance grb (mS) Input conductance gib (mS) −30 −100 yfb = gfb + jbfb VCB = 10 V 200 Forward transfer susceptance bfb (mS) f = 900 MHz −5 mA yrb = grb + jbrb VCB = 10 V − 0.8 IE = −2 mA −30 Reverse transfer susceptance brb (mS) −20 −10 bfb gfb − 0.4 −10 −3 48 0 yib = gib + jbib VCB = 10 V −1 Emitter current IE (mA) brb grb 0 −60 −1 Emitter current IE (mA) Emitter current IE (mA) Input susceptance bib (mS) NF IE 12 VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C 35 Power gain PG (dB) Reverse transfer impedance Zrb (Ω) 120 40 f = 200 MHz IE = −5 mA 32 24 300 −2 mA 500 600 16 900 8 0 −60 −40 −20 0 20 40 Forward transfer conductance gfb (mS) bob gob 12 yob = gob + jbob VCE = 10 V 900 Output susceptance bob (mS) 10 600 8 IE = −2 mA 500 6 4 300 2 0 −5 mA f = 200 MHz 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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