2SJ479(L), 2SJ479(S) Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-541 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 1 1 G S 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A –120 A –30 A 50 W Drain peak current I D(pulse) Body to drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 2 2SJ479(L), 2SJ479(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –30 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –10 µA VDS = –30 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state RDS(on) — 25 35 mΩ I D = –15A, VGS = –10V Note3 resistance RDS(on) — 40 60 mΩ I D = –15A, VGS = –4V Note3 Forward transfer admittance |yfs| 12 20 — S I D = –15A, VDS = –10V Note3 Input capacitance Ciss — 1700 — pF VDS = –10V Output capacitance Coss — 950 — pF VGS = 0 Reverse transfer capacitance Crss — 260 — pF f = 1MHz Turn-on delay time t d(on) — 20 — ns VGS = –10V, ID = –15A Rise time tr — 290 — ns RL = 0.67Ω Turn-off delay time t d(off) — 170 — ns Fall time tf — 130 — ns Body to drain diode forward voltage VDF — –1.1 — V I F = –30A, VGS = 0 Body to drain diode reverse recovery time t rr — 70 — ns I F = –30A, VGS = 0 diF/ dt = 50A/µs Note: 3. Pulse test See characteristic curves of 2SJ471 3 2SJ479(L), 2SJ479(S) Main Characteristics Power vs. Temperature Derating Maximun Safe Operation Area –500 75 –10 –5 (1 sh ot ) ) °C 150 s 25 100 s m = 50 m c –1 0 1 10 Operation in this area is limited by R DS(on) –2 –0.5 = µs –20 0 PW (T 25 –50 10 50 10 µs –100 n tio ra pe O Drain Current I D (A) –200 C D Channel Dissipation Pch (W) 100 Ta = 25 °C –3 –0.1 –0.3 –1 –10 –30 –100 Drain to Source Voltage V DS (V) 200 Case Temperature Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermao Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 2.5 °C/W, Tc = 25 °C 0.1 0.05 0.03 0.01 10 µ PDM 0.02 1 lse 0.0 t pu ho 1s 100 µ PW T PW T 1m 10 m Pulse Width PW (S) 4 D= 100 m 1 10 2SJ479(L), 2SJ479(S) Switching Timen Test Circuit Waveform Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% Vin 10 V 50Ω V DD = –10 V 90% 90% Vout td(on) 10% 10% tr td(off) tf 5 2SJ479(L), 2SJ479(S) Package Dimensions As of January, 2001 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6 LDPAK (L) — — 1.4 g 2SJ479(L), 2SJ479(S) As of January, 2001 Unit: mm 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 3.0 +– 0.5 1.27 ± 0.2 1.2 ± 0.2 (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.15 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(1) — — 1.3 g 7 2SJ479(L), 2SJ479(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 LDPAK (S)-(2) — — 1.35 g 2SJ479(L), 2SJ479(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 9