ETC BLT80/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT71/8
UHF power transistor
Preliminary specification
File under Discrete Semiconductors, SC08b
1996 Feb 06
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT71/8
FEATURES
DESCRIPTION
• High efficiency
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT96-1 (SO8) SMD package.
• Very high gain
• Internal pre-matched input
• Low supply voltage.
handbook, halfpage
8
APPLICATIONS
5
c
• Hand-held radio equipment in common emitter class-AB
operation for 900 MHz communication band.
b
PINNING - SOT96-1
PIN
e
SYMBOL
1
DESCRIPTION
1, 8
b
base
2, 4, 5, 7
e
emitter
3, 6
c
collector
4
MAM227
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
CW, class-AB
900
4.8
1.2
1996 Feb 06
2
Gp
(dB)
ηC
(%)
≥11
≥55
typ. 13
typ. 63
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT71/8
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
16
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
500
mA
Ptot
total power dissipation
−
2.9
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
Ts = 60 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
VALUE
UNIT
40
K/W
Ptot = 2.9 W; Ts = 60 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.5 mA
16
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
8
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
−
V
mA
ICES
collector leakage current
VCE = 8 V; VBE = 0
−
0.1
hFE
DC current gain
VCE = 5 V; IC = 100 mA
25
−
Cc
collector capacitance
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
−
7
pF
Cre
feedback capacitance
VCE = 4.8 V; IC = 0; f = 1 MHz
−
5
pF
1996 Feb 06
3
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT71/8
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (note 1).
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
CW, class-AB
900
4.8
3
1.2
ηC
(%)
Gp
(dB)
≥11
≥55
typ. 13
typ. 63
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts ≤ 60 °C.
MGD192
MGD191
80
16
Gp
(dB)
handbook, halfpage
ηC
2.0
PL
(W)
handbook, halfpage
ηC
(%)
1.6
12
Gp
60
1.2
40
8
0.8
20
4
0.4
0
0
0.4
0.8
1.2
0
1.6
2.0
PL (W)
0
0
f = 900 MHz; VCE = 4.8 V; ICQ = 3 mA; Ts ≤ 60 °C.
Fig.2
100
150
200
PIN (mW)
f = 900 MHz; VCE = 4.8 V; ICQ = 3 mA; Ts ≤ 60 °C.
Power gain and collector efficiency as
functions of load power; typical values.
1996 Feb 06
50
Fig.3
4
Load power as a function of input
power; typical values.
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT71/8
MGD194
MGD193
10
ZL
(Ω)
15
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ri
8
RL
10
6
5
xi
4
XL
0
2
−5
800
850
900
f (MHz)
0
800
950
850
900
f (MHz)
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.4
Fig.5
Input impedance as a function of frequency
(series components); typical values.
Load impedance as a function of frequency
(series components); typical values.
MGD195
16
23.4
handbook, halfpage
handbook, halfpage
Gp
(dB)
12
8
Zi
ZL
4
0
850
900
950
f (MHz)
Zi
1000
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.6
1996 Feb 06
ZL
MGD196
Dimensions in mm.
Power gain as a function of frequency
(series components); typical values.
Fig.7
5
950
RF test print and definition of
transistor impedance.
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT71/8
PACKAGE OUTLINE
4.0
3.8
5.0
4.8
handbook, full pagewidth
S
A
6.2
5.8
0.1 S
0.7
0.3
5
8
0.7
0.6
1.45
1.25
1
4
1.0
0.5
0.25
0.10
pin 1
index
detail A
1.27
0.49
0.36
0.25 M
(8x)
Dimensions in mm.
Fig.8 SOT96-1.
1996 Feb 06
6
1.75
1.35
0.25
0.19
0 to 8
MBC180 - 1
o
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT71/8
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Feb 06
7