DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES BFG16A PINNING • High power gain PIN DESCRIPTION • Good thermal stability 1 emitter • Gold metallization ensures excellent reliability. 2 base 3 emitter 4 collector 4 fpage DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. 1 It is primarily intended for use in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes. 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 40 V VCEO collector-emitter voltage open base − − 25 V IC DC collector current − − 150 mA Ptot total power dissipation up to Ts = 110 °C; note 1 − − 1 W hFE DC current gain IC = 150 mA; VCE = 5 V; Tj = 25 °C 25 80 − fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 1.5 − GHz GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 10 − dB Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 150 mA Ptot total power dissipation − 1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 110 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 12 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction up to Ts = 110 °C; note 1 to soldering point VALUE UNIT 40 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 25 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 18 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 3 − − V ICBO collector cut-off current − − 20 µA hFE DC current gain IC = 150 mA; VCE = 5 V 25 80 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 10.0 − pF IE = 0; VCB = 28 V Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 1.5 − GHz GUM maximum unilateral power gain note 1 IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 10 − dB Note s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 1995 Sep 12 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A MBG198 MBB365 1.2 160 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 120 0.8 0.6 80 0.4 40 0.2 0 0 0 50 100 150 200 T s ( o C) 100 0 200 I C (mA) VCE = 10 V; Tj = 25 °C. Fig.3 Fig.2 Power derating curve. MBB363 DC current gain as function of collector current. MBB364 2 5 handbook, halfpage handbook, halfpage fT C re (pF) (GHz) 4 1.6 3 1.2 2 0.8 1 0.4 0 0 0 4 8 12 0 16 20 VCB (V) 1995 Sep 12 80 120 160 I C (mA) VCE = 10 V; f = 500 MHz; Tamb = 25 °C. IC = ic = 0; f = 1 MHz. Fig.4 40 Feedback capacitance as function of collector-base voltage. Fig.5 4 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A 50 handbook, full pagewidth 3 GHz 25 100 10 250 +j 10 0 25 50 100 250 –j 10 250 40 MHz 100 25 MBB366 50 IC = 70 mA; VCE = 15 V; Zo = 50 Ω. Fig.6 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 40 MHz 150 o 180 o 50 30 o 40 30 20 10 0o 3 GHz 30 o 150 o 60 o 120 o 90 o MBB367 IC = 70 mA; VCE = 15 V. Fig.7 Common emitter forward transmission coefficient (S21). 1995 Sep 12 5 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A 90 o handbook, full pagewidth 60 o 120 o 150 o 3 GHz 0.5 180 o 0.4 0.3 0.2 30 o 0.1 0o 40 MHz 30 o 150 o 60 o 120 o 90 o MBB368 IC = 70 mA; VCE = 15 V. Fig.8 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 10 100 250 3 GHz +j 0 10 25 50 100 250 –j 40 MHz 10 250 100 25 50 MBB369 IC = 70 mA; VCE = 15 V; Zo = 50 Ω. Fig.9 Common emitter output transmission coefficient (S22). 1995 Sep 12 6 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 6.7 6.3 0.32 0.24 B 3.1 2.9 0.2 M A 4 A 0.10 0.01 16 o max 16 3.7 3.3 o 1 1.80 max 10 o max 2 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.10 SOT223. 1995 Sep 12 7.3 6.7 7 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 8