DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability PIN DESCRIPTION • High gain bandwidth product 1 emitter • Good thermal stability 2 base • Gold metallization ensures excellent reliability. 3 emitter 4 collector 4 page DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. 1 2 Top view It is intended for wideband amplifier applications. 3 MSB002 - 1 Fig.1 SOT223. NPN complement is the BFG97. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO collector-emitter voltage IC DC collector current CONDITIONS open base MIN. TYP. MAX. UNIT − − −15 V − − −100 mA W Ptot total power dissipation up to Ts = 135 °C ; note 1 − − 1 hFE DC current gain IC = −70 mA; VCE = −10 V; Tamb = 25 °C 25 − − fT transition frequency IC = −70 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 5.0 − GHz GUM maximum unilateral power gain IC = −70 mA; VCE = −10 V; f = 800 MHz; Tamb = 25 °C − 12 − dB Vo output voltage IC = −100 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C − 600 − mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − −20 V collector-emitter voltage open base − −15 V emitter-base voltage open collector − −3 V − −100 mA VCBO collector-base voltage VCEO VEBO IC DC collector current Ptot total power dissipation − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C up to Ts = 135 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 12 2 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS THERMAL RESISTANCE up to Ts = 135 °C; note 1 40 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. −20 TYP. − MAX. UNIT − V V(BR)CBO collector-base breakdown voltage open emitter; IC = −10 mA V(BR)CEO collector-emitter breakdown voltage open base; IC = −10 mA −18 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = −0.1 mA −3 − − V ICBO collector cut-off current IE = 0; VCB = −10 V − − −1 µA hFE DC current gain IC = −70 mA; VCE = −10 V; Tamb = 25 °C 25 − − Ccb collector-base capacitance IC = 0; VCB = −10 V; f = 1 MHz; − 1.8 − pF Ceb emitter-base capacitance IC = 0; VEB = −10 V; f = 1 MHz − 5 − pF Cre feedback capacitance IC = 0; VCE = −10 V; f = 1 MHz; Tamb = 25 °C − 1.6 − pF fT transition frequency IC = −70 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 5 − GHz GUM maximum unilateral power gain; note 1 IC = −70 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 16 − dB IC = −70 mA; VCE = −10 V; f = 800 MHz; Tamb = 25 °C − 12 − dB Vo output voltage note 2 − 600 − mV Vo output voltage note 3 − 550 − mV Notes s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. dim = −60 dB; IC = −70 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 850.25 MHz; Vq = Vo −6 dB; fq = 858.25 MHz; Vr = Vo −6 dB;fr = 860.25 MHz; measured at f(p+q−r) = 848.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = −70 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo = at dim = −60 dB; fp = 445.25 MHz; Vq = Vo −6 dB; fq = 453.25 MHz; Vr = Vo −6 dB; fr = 455.25 MHz; measured at f(p+q−r) = 443.25 MHz. 1995 Sep 12 3 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 MBB344 MBB345 1.2 80 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 60 0.8 0.6 40 0.4 20 0.2 0 0 0 50 100 150 200 T s ( o C) 100 0 I C (mA) 200 VCE = −10 V; Tamb = 25 °C. Fig.3 Fig.2 Power derating curve. MBB346 DC current gain as a function of collector current. MBB347 8 6 handbook, halfpage handbook, halfpage C re (pF) fT (GHz) 5 6 4 4 3 2 2 1 0 0 10 20 VCE (V) 0 30 f = 1 MHz; Tamb = 25 °C Fig.4 I C (mA) 100 VCE = −10 V; Tamb = 25 °C. Feedback capacitance as a function of collector-emitter voltage. 1995 Sep 12 50 Fig.5 4 Transition frequency as a function of collector current. Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 MBB348 MBB349 50 40 handbook, halfpage handbook, halfpage d im (dB) d im (dB) 45 55 50 55 60 60 65 40 60 80 I C (mA) 65 40 100 VCE = −10 V; Vo = 650 mV; Tamb = 25 °C; f(p+q−r) = 443.25 MHz. Fig.6 60 80 100 120 I C (mA) VCE = −10 V; Vo = 550 mV; Tamb = 25 °C; f(p+q−r) = 848.25 MHz. Intermodulation distortion as a function of collector current. Fig.7 Intermodulation distortion as a function of collector current. MBB350 MBB351 10 10 handbook, halfpage handbook, halfpage d2 (dB) d2 (dB) 20 20 30 30 40 40 50 50 60 10 30 50 70 90 60 10 110 I C (mA) VCE = −10 V; Vo = 50 dBmV; Tamb = 25 °C; f(p+q) = 450 MHz. 50 70 90 110 I C (mA) VCE = −10 V; Vo = 50 dBmV; Tamb = 25 °C; f(p+q) = 810 MHz. Fig.8 Second order intermodulation distortion as a function of collector current. 1995 Sep 12 30 Fig.9 5 Second order intermodulation distortion as a function of collector current. Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 1 2 10 max 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.10 SOT223. 1995 Sep 12 7.3 6.7 o o 1.80 max 0.2 M A 6 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 7