DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. PIN DESCRIPTION Code: FA page 1 emitter 2 collector 3 base 1 2 Bottom view 3 MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 25 V ICM peak collector current − 300 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1 W fT transition frequency IC = 150 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C 1.5 − GHz Cre feedback capacitance IC = 10 mA; VCE = 15 V; f = 1 MHz; Tamb = 25 °C 1.9 − pF MIN. MAX. UNIT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE ≤ 50 Ω − 40 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 150 mA ICM peak collector current f > 1 MHz − 300 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS THERMAL RESISTANCE up to Ts = 145 °C (note 1) 30 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 20 V; Tj = 50 °C − − 20 µA collector-emitter saturation voltage IC = 100 mA; IB = 10 mA − − 0.5 V DC current gain IC = 150 mA; VCE = 5 V 25 80 − Cc collector capacitance IE = ie = 0; VCB = 15 V; f = 1 MHz − − 4 pF Cre feedback capacitance IC = 10 mA; VCE = 15 V; f = 1 MHz; Tamb = 25 °C − 1.9 − pF fT transition frequency IC = 150 mA; VCE = 15 V; f = 500 MHz − 1.5 − GHz GUM maximum unilateral power gain (note 1) IC = 60 mA; VCE = 15 V; f = 200 MHz; Tamb = 25 °C − 16 − dB IC = 60 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 °C − 6.5 − dB ICBO collector cut-off current VCE sat hFE Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 1 – S 11 22 September 1995 3 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 MBB365 MBB828 160 10 handbook, halfpage handbook, halfpage Cc (pF) h FE 8 120 6 80 4 40 2 0 0 100 0 200 I C (mA) 0 10 VCE = 5 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 DC current gain as a function of collector current. MBB364 2 handbook, halfpage fT (GHz) 1.6 1.2 0.8 0.4 0 0 40 80 120 160 I C (mA) VCE = 15 V; f = 500 MHz; Tj = 25 °C. Fig.4 Transition frequency as a function of collector current. September 1995 4 20 30 V CB (V) 40 Collector capacitance as a function of collector-base voltage. Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 September 1995 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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