PHILIPS BT136F-500G

Philips Semiconductors
Product specification
Triacs
BT136F series
GENERAL DESCRIPTION
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
PINNING - SOT186
PIN
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
VDRM
BT136FBT136FBT136FRepetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
V
4
25
4
25
4
25
A
A
IT(RMS)
ITSM
PIN CONFIGURATION
SYMBOL
DESCRIPTION
case
1
main terminal 1
2
main terminal 2
3
gate
T2
T1
G
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
CONDITIONS
MIN.
-
full sine wave; Ths ≤ 92 ˚C
full sine wave; Tj = 125 ˚C prior
to surge; with reapplied VDRM(max)
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ GT2- GT2- G+
over any 20 ms period
MAX.
-500
5001
-600
6001
UNIT
-800
800
V
-
4
A
-
25
27
3.1
A
A
A2s
-40
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
February 1996
1
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
TYP.
-
MAX.
UNIT
1500
V
-
12
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
5.5
7.2
-
K/W
K/W
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
full or half cycle
with heatsink compound
without heatsink compound
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
February 1996
CONDITIONS
MIN.
BT136FVD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max);
Tj = 125 ˚C
2
TYP.
MAX.
UNIT
...
...F
...G
-
5
8
11
30
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
-
7
16
5
7
5
20
30
20
30
15
20
30
20
30
15
30
45
30
45
30
mA
mA
mA
mA
mA
0.25
1.4
0.7
0.4
1.70
1.5
-
V
V
V
-
0.1
0.5
mA
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
dVD/dt
Critical rate of rise of
off-state voltage
dVcom/dt
Critical rate of change of
commutating voltage
tgt
Gate controlled turn-on
time
8
CONDITIONS
BT136
Ptot / W
MIN.
BT136FVDM = 67% VDRM(max)V;
Tj = 125 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
Ths(max) / C
30
81
86.5
7
6
= 180
1
4
UNIT
...F
50
...G
200
250
-
V/µs
-
-
10
50
-
V/µs
-
-
-
2
-
µs
ITSM / A
BT136
ITSM
IT
time
T
92
20
97.5
90
60
MAX.
...
100
25
120
5
TYP.
103
Tj initial = 125 C max
15
30
3
108.5
2
114
1
119.5
10
0
0
1
2
3
IT(RMS) / A
5
125
5
4
0
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
1
10
100
Number of cycles at 50Hz
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
BT136
ITSM / A
5
I TSM
IT
T
IT(RMS) / A
BT136X
92 C
time
4
Tj initial = 125 C max
3
100
dI T /dt limit
2
T2- G+ quadrant
1
10
10us
100us
1ms
T/s
10ms
100ms
0
-50
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
February 1996
0
50
Ths / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
3
Rev 1.100
Philips Semiconductors
Product specification
Triacs
12
BT136F series
BT136
IT(RMS) / A
3
IL(Tj)
IL(25 C)
TRIAC
10
2.5
8
2
6
1.5
4
1
2
0.5
0
0.01
0.1
1
surge duration / s
0
-50
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 92˚C.
1.6
VGT(Tj)
VGT(25 C)
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
BT136
IH(Tj)
IH(25C)
TRIAC
2.5
1.4
2
1.2
1.5
1
1
0.8
0.5
0.6
0
-50
0.4
-50
0
50
Tj / C
100
IGT(Tj)
IGT(25 C)
12
BT136
2
4
0.5
2
100
0
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
February 1996
max
8
1
50
Tj / C
150
Vo = 1.27 V
Rs = 0.091 ohms
6
0
typ
10
1.5
0
-50
100
BT136
IT / A
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- GT2- G+
2.5
50
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
0
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
4
Rev 1.100
Philips Semiconductors
Product specification
Triacs
10
BT136F series
BT136
Zth j-hs (K/W)
1000
dVcom/dt (V/us)
with heatsink compound
without heatsink compound
off-state dV/dt limit
BT136...G SERIES
unidirectional
BT136 SERIES
1
100
bidirectional
0.1
P
D
tp
BT136...F SERIES
10
t
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
dIcom/dt = 5.1
A/ms
1
10s
3
50
2.3
1.8
100
1.4
150
Tj / C
tp / s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
February 1996
0
3.9
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
5
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
2
3
0.9
0.7
M
0.55 max
2.54
1.3
5.08
top view
Fig.13. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1996
6
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
7
Rev 1.100