Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 (ON3731, ON3732, ON3734, ON3731A, ON3732A, ON3734A) 0 to 19.82±0.5 Signal transfer between circuits with different potentials and impedances 1 2 3 4 5 6 7 8 3.85±0.3 2.0 CNZ3734 CNC7H501 0 4 1 16 3 2 3 15 14 Top View CNC7C501 CNC7C502 1 8 4 5 13 12 2 3 7 6 6 7 11 10 5 8 Top View +0.15 16 15 14 13 12 11 10 9 5˚ to 1 8-0.5±0.1 8-1.2±0.15 2.54±0.25 2.54 min. 1,3: Anodee 2,4: Cathode 5,7: Emitter 6,8: Collector 5.2 max. 0.5 min. 7.62±0.3 6.2±0.5 CNZ3731 CNC2S501 0 5˚ to 1 CNZ3734/CNC7H501 Programmable controllers Pin Connection +0.15 5˚ to 1 LED Mark FAX 0.25 –0 9.66±0.3 7.62±0.3 6.2±0.5 Telephones Telephone exchange Unit : mm 8 7 6 5 0 Applications 1: Anode 2: Cathode 3: Emitter 4: Collector 5.2 max. 0.5 min. 1 2 3 4 UL listed (UL File No. E79920) A-type models have a guaranteed internal insulating distance of 0.4 mm 15˚ Unit : mm 2.54 min. +0.15 Small DIL package for saving mounting space 0 to CNC7C501/CNC7C502 3.85±0.3 2.0 High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms 4 15˚ LED Mark A type : VCEO > 350 V 4-0.5±0.1 4-1.2±0.15 2.54±0.25 3.85±0.3 2.0 7.62±0.3 6.2±0.5 High collector to emitter breakdown voltage : VCEO > 300 V, 2.54 min. 4 3 0.25 –0 4.58±0.3 1 2 0.25 –0 Features 2 5.2 max. 0.5 min. LED Mark The CNZ3731 series of optoisolators consist of a GaAs infrared LED which is optically coupled with a Si NPN Darlington phototransistor, and housed in a small DIL package. The series provides high I/O isolation voltage and high collector/emitter isolation voltage, as well as a high current transfer ratio (CTR). This opto isolator series also includes the two-channel CNC7C501 and the fourchannel CNZ3734, and A type of these models with increased collector to emitter breakdown voltage (VCEO > 350V). 1 Unit : mm CNZ3731/CNC2S501 Overview 16-0.5±0.1 16-1.2±0.15 2.54±0.25 Optoisolators 1 , 3 , 5 , 7 : Anode 2 , 4 , 6 , 8 : Cathode 5˚ 9,11,13,15: Emitter 1 0 to 10,12,14,16: Collector 9 Top View Note) The part numbers in the parenthesis show conventional part number. 1 CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 Optoisolators (Photocouplers) Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings CNC7C501 CNZ3734 CNZ3731 CNC7C502 CNC7H501 CNC2S501 Unit Reverse voltage (DC) VR 6 6 V Forward current (DC) Input (Light emitting diode) Pulse forward current IF 50 50 mA IFP*1 1 1 A Power dissipation 75 75 mW IC 150 150 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 300 350 V VECO 0.3 0.3 V Collector power dissipation PC*3 300 150 300 150 mW PT 320 200 320 200 mW Collector current Total power dissipation PD *2 VISO*4 5000 5000 Vrms Operating ambient temperature Topr –30 to +100 –30 to +100 ˚C Storage temperature Tstg –55 to +125 –55 to +125 ˚C Isolation voltage, input to output *1 *2 *3 *4 Pulse width ≤ 100 µs, repeat 100 pps Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501). Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501). AC 1min., RH < 60 % Electrical Characteristics (Ta = 25˚C) Parameter Reverse current (DC) Input Forward voltage (DC) characteristics Capacitance between pins Collector cutoff current Output characteristics Collector to emitter capacitance DC current transfer ratio Symbol Conditions IR VR = 3V VF IF = 50mA Ct VR = 0V, f = 1MHz ICEO VCE = 200V CC VCE = 10V, f = 1MHz CTR*1 VCE = 2V, IF = 1mA *3 2 nA pF µs Rt = 100Ω 15 Collector to emitter saturation voltage VCE(sat) IF = 1mA, IC = 2mA *2 200 10 current transfer ratio (CTR) is a ratio of output current against DC input current. IC × 100 (%) IF tr : Time required for the collector current to increase from 10% to 90% of its final value tf : Time required for the collector current to decrease from 90% to 10% of its initial value 1000 V pF 40 VISO = 500V CTR = 1.5 30 VCC = 10V, IC = 10mA, RISO *1 DC µA % Isolation resistance, input to output Transfer characteristics Rise time tf*3 Unit 10 pF f = 1MHz Fall time 1.35 max 0.7 CISO tr typ 4000 Isolation capacitance, input to output *2 min Ω 1011 µs 1.0 V Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 PD — Ta PC — Ta IFP — DR 10 5 100 50 0 – 30 0 25 50 75 100 IFP (mA) 150 300 CNZ3731 CNC2S501 200 CNC7C501/ CNC7C502 CNZ3734/ CNC7H501 100 0 – 30 125 Allowable pulse forward current PC (mW) 400 Collector power dissipation LED Power dissipation PD (mW) 200 Ambient temperature Ta (˚C ) 0 25 50 75 100 Pulse width ≤ 100µs Ta = 25˚C 10 4 10 3 10 2 10 10 –3 125 10 –2 Ambient temperature Ta (˚C ) IF — V F IC — VCE 60 10 –1 1 Duty ratio DR IC — VCE(sat) 10 3 160 Ta = 25˚C Pc(max.) Ta = 25˚C Ta = 25˚C IF = 5mA 30 20 IC (mA) 40 120 3mA 2mA 80 10 2 2mA 1mA Collector current IC (mA) IF = 5mA Collector current Forward current IF (mA) 50 1.5mA 1mA 40 10 0.5mA 1 10 0.5mA 0 0.4 0.8 1.2 1.6 2.0 0 2.4 Forward voltage VF (V) 0 10 1 10 Forward current IF (mA) 10 2 0.4 0.8 10 4 10 3 1 1.2 Collector saturation voltage VCE(sat) (V) Relative CTR — Ta 10 5 10 2 10 –1 0 120 VCE = 2V Ta = 25˚C DC current transfer ratio CTR (%) IC (mA) Collector current 10 –1 8 CTR — IF VCE = 2V Ta = 25˚C 1 6 10 6 10 2 10 –1 10 –1 4 Collector to emitter voltage VCE (V) IC — I F 10 3 2 10 Forward current IF (mA) 10 2 Relative DC current transfer ratio CTR (%) 0 IF = 1mA VCE = 2V 100 80 60 40 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) 3 CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 VCE(sat) — Ta ICEO — Ta Ta = 25˚C VCE = 200V IF = 1mA IC = 2mA 1.0 0.8 10 –7 10 –8 Dark current ICEO (A) 1.2 ICEO (A) 10 –6 1.4 Dark current Collector to emitter saturation voltage VCE(sat) (V) ICEO — VCE 10 –5 1.6 10 –9 10 –8 10 –9 10 –10 0.6 0.4 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) 10 –11 – 40 – 20 VCC = 10V IC = 10mA Ta = 25˚C 0 20 40 60 80 10 –10 10 100 Ambient temperature Ta (˚C ) Response time — External load resistance characteristics 10 3 Optoisolators (Photocouplers) 10 –2 10 –3 Collector to emitter voltage VCE (V) Response time measurement circuit tr 10 2 (µs) Response time Sig.IN tf td ts VCC V1 5ms 10 V1 50Ω ;;;; ;;; ; RL 1 10 –1 10 –2 10 –1 1 90% 10% V2 td tr ts tf 10 External load resistance RL (kΩ) Frequency characteristics 10 Measurement circuit of frequency characteristics VCE = 4V Ta = 25˚C IC = 10mA RL = 10Ω 50kΩ 16V 100µF Sig.OUT + 50Ω ;;; 5kΩ 1 10 10 2 Frequency f (kHz) 10 3 RL 4mAp - p 50Ω – 20 – IC = 10mA Sig.IN 1kΩ ;;;; 100Ω – 10 – 30 10 –1 4 +10V ;; Voltage gain AV (dB) VCC 0 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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