Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 ■ Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) (Ta=25˚C) Symbol Ratings Unit VCBO 50 V 50 V 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C +0.1 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 8Y Internal Connection 6 Tr1 5 4 ■ Electrical Characteristics Parameter 1.45±0.1 +0.1 0 to 0.05 0.4±0.2 IC 1 2 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Input resistance R1 Collector cutoff current *1 0.5 –0.05 3 0.16–0.06 0.95 4 0.1 to 0.3 VCEO Storage temperature 2 0.95 +0.1 UNR1216(UN1216) × 2 elements 5 0.8 +0.2 ■ Basic Part Number of Element ● 1.9±0.1 2.9 –0.05 +0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 460 0.99 0.25 4.9 V 0.2 150 –30% V 4.7 V MHz +30% kΩ Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN06216 PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 Collector to emitter voltage VCE 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 0 (V) 1 3 10 10000 –25˚C 200 150 100 50 30 100 1 (mA) 3 3 2 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 25˚C 250 IO — VIN 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 2 Ta=75˚C 300 0 0.3 Collector current IC f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 –25˚C Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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