ETC IRF7828

PD - 94602
IRF7828
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
SO-8
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
T o p V ie w
DEVICE CHARACTERISTICS…
IRF7828
RDS(on)
9.5mΩ
QG
9.2nC
Qsw
3.7nC
Qoss
6.1nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 70°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
Symbol
IRF7828
Units
VDS
30
V
VGS
±20
ID
13.6
IDM
100
11
PD
TL = 70°C
2.5
A
W
1.6
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.1
A
Pulsed Source Current
ISM
100
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
12/5/02
IRF7828
Electrical Characteristics
Parameter
Min
Typ
Max
Units
Drain-to-Source
Breakdown Voltage
BVDSS
30
–
–
V
Static Drain-Source
on Resistance
RDS(on)
–
9.5
12.5
mΩ
Gate Threshold Voltage
VGS(th)
1.0
–
–
V
Drain-Source Leakage
Current
IDSS
–
–
1.0
–
–
150
Current*
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 10A‚
VDS = VGS,I D = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 125°C
Gate-Source Leakage
Current
IGSS
–
–
±100
nA
Total Gate Chg Cont FET
QG
–
9.2
14
VGS= 5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET
QG
–
7.3
–
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
–
2.5
–
VDS = 15V, ID = 10A
Post-Vth
Gate-Source Charge
QGS2
–
0.8
–
Gate to Drain Charge
QGD
–
2.9
–
Switch Chg(Qgs2 + Qgd)
Qsw
–
3.7
–
nC
Output Charge
Qoss
–
6.1
–
Gate Resistance
RG
–
2.3
–
Turn-on Delay Time
td (on)
–
6.3
–
Rise Time
tr
–
2.7
–
Turn-off Delay Time
td
–
9.7
–
Fall Time
tf
–
7.3
–
Input Capacitance
Ciss
–
1010
–
Output Capacitance
Coss
–
360
–
Reverse Transfer Capacitance Crss
–
110
–
Min
Typ
Max
Units
(off)
VGS = ±20V
VDS = 10V, VGS = 0
Ω
VDD = 15V, ID = 10A
ns
VGS = 4.5V
Clamped Inductive Load
pF
VDS = 15V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Conditions
Diode Forward
Voltage*
VSD
–
–
1.0
V
IS = 10A‚, VGS = 0V
Reverse Recovery
Charge„
Qrr
–
13
–
nC
di/dt ~ 700A/µs
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:
2

‚
ƒ
„
…
VDS = 16V, VGS = 0V, IS = 15A
–
13
–
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS
measured at VGS = 5.0V, IF = 10A.
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IRF7828
12
ID = 14A
ID= 10A
VGS , Gate-to-Source Voltage (V)
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
2.0
1.0
8
6
4
2
0
0.5
-60 -40 -20
0
20
40
60
0
80 100 120 140 160
T J , Junction Temperature (°C)
5
10
15
20
Q G Total Gate Charge (nC)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
20
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
RDS(on) , Drain-to -Source On Resistance (m Ω)
VDS= 24V
VDS= 15V
10
15
ID = 14A
10
5
Ciss
1000
Coss
Crss
100
10
2
4
6
8
VGS, Gate -to -Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
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10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7828
100.0
100.0
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (Α)
T J = 150°C
10.0
T J = 25°C
1.0
T J = 150°C
10.0
1.0
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
VGS = 0V
0.1
0.1
2.0
3.0
4.0
5.0
0.0
6.0
0.5
VGS , Gate-to-Source Voltage (V)
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
Thermal Response ( Z thJA )
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7828
SO-8 Package Details
DIM
D
-B-
5
8
E
-A-
1
7
2
6
3
e
6X
5
H
0.25 (.010)
4
M
A M
θ
e1
K x 45°
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
A1
L
8X
6
C
8X
M C A S B S
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
1.
2.
3.
4.
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
1.27 ( .050 )
3X
SO-8 Part Marking
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5
IRF7828
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/02
6
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