Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED IRHN9230 HEXFET® TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.8Ω Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. In addition these devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number BVDSS RDS(on) ID IRHN9230 -200V 0.8Ω -6.5A Features: n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount n Light-weight Absolute Maximum Ratings Pre-Radiation Parameter IRHN9230 Units -6.5 -4.0 A VGS EAS Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy -26 75 0.6 ±20 150 W W/K V mJ IAR EAR dv/dt Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt -6.5 7.5 -5.0 ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ V GS = -12V, TC = 100°C Continuous Drain Current I DM PD @ TC = 25°C TJ TSTG Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Notes: See page 4 A mJ V/ns -55 to 150 oC 300 (for 5 seconds) 2.6 (typical) g IRHN9230 Device Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units -200 — — -0.22 — — — — -2.0 2.5 — — — — — — — — 0.8 0.92 -4.0 — -25 -250 V V/°C IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — TBD -100 100 45 10 25 50 90 90 90 — LS Internal Source Inductance — TBD — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 310 55 — — — Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC Test Conditions VGS = 0V, ID = -1.0 mA Reference to 25°C, ID = -1.0 mA VGS = -12V, ID = -4.0A VGS = -12V, ID = -6.5A VDS = VGS, I D = -1.0 mA VDS > -15V, IDS = -4.0 A VDS = 0.8 x Max. Rating,VGS = 0V VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -6.5A VDS = Max. Rating x 0.5 VDD = 100V, ID = -6.5A, RG = 7.5Ω ns nH pF Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = -25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter IS I SM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units — — -6.5 — — -26 A Test Conditions Modified MOSFET symbol showing the integral Reverse p-n junction rectifier. — — -5.0 V Tj = 25°C, IS = -6.5A, VGS = 0V — — 400 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100 A/µs — — 3.0 µC VDD ≤ -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Notes: See page 4 Min. Typ. Max. Units — — — TBD 1.67 — K/W Test Conditions Soldered to a copper-clad PC board IRHN9230 Device Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Table 1. Low Dose Rate International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier P-Channel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects environment the results are shown in Table 3. IRHN9230 Test Conditions Units min. max. -200 -2.0 — — — — — -4.0 -100 100 -25 0.8 nA µA Ω VGS = 0V, ID = -1.0 mA VGS = VDS, I D = -1.0 mA VGS = -20V VGS = 20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, ID = -4.0A — -5.0 V TC = 25°C, I S = -6.5A,VGS = 0V Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage VSD High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. 100K Rads (Si) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. V Table 2. High Dose Rate 1011 Rads (Si)/sec1012 Rads (Si)/sec Parameter VDSS Min. Typ Max. Min.Typ. Max. Units Drain-to-Source Voltage — IPP di/dt L1 — — 27 — -160 -60 — -800 — — — — — -160 — -60 — -160 0.5 — — — — Test Conditions V Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/µsec Rate of rise of photo-current µH Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS -200 V Ni 28 1 x 105 ~41 -200 +5 IRHN9230 Device Radiation Characteristics ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. ➅ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. ➁ @ VDD = -50V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] 25 ≤ RG ≤ 200Ω, IL = -6.5A, VGS = -12V ➆ Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. ➂ ISD ≤ -6.5A, di/dt ≤ -140 A/µs, VDD ≤ BV DSS, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ K/W = °C/W W/K = W/°C ➇ This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. ➈ Process characterized by independent laboratory. ➉ All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — SMD-1 Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4 Dimension includes metallization flash 5 Dimension does not include metallization flash WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371 http://www/irf.com/ Data and specifications subject to change without notice. 6/96