DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4320T 20 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat SYMBOL • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. PARAMETER MAX. UNIT VCEO collector-emitter voltage 20 V IC collector current (DC) 2 A ICRP repetitive peak collector current 3 A RCEsat equivalent on-resistance 105 mΩ APPLICATIONS • Power management applications PINNING • Low and medium power DC/DC convertors PIN DESCRIPTION • Supply line switching 1 base • Battery chargers 2 emitter • Linear voltage regulation with low voltage drop-out (LDO). 3 collector DESCRIPTION handbook, halfpage NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PBSS4320T 1 2 2 ZG∗ Top view MAM255 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = w: Made in China. 2002 Aug 08 Fig.1 2 Simplified outline (SOT23) and symbol. Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 2 A ICRP repetitive peak collector current note 1 − 3 A ICM peak collector current single peak − 5 A IB base current (DC) − 0.5 A Ptot total power dissipation Tamb ≤ 25 °C; note 2 − 300 mW Tamb ≤ 25 °C; note 3 − 480 mW Tamb ≤ 25 °C; note 4 − 540 mW Tamb ≤ 25 °C; notes 1 and 2 − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W in free air; note 3 230 K/W in free air; notes 1 and 4 104 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2002 Aug 08 3 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER emitter-base cut-off current hFE DC current gain collector-emitter saturation voltage MIN. TYP. MAX. UNIT − − 100 nA VCB = 20 V; IE = 0; Tj = 150 °C − − 50 µA VEB = 5 V; IC = 0 − − 100 nA collector-base cut-off current VCB = 20 V; IE = 0 IEBO VCEsat CONDITIONS VCE = 2 V; IC = 100 mA 220 − − VCE = 2 V; IC = 500 mA 220 − − VCE = 2 V; IC = 1 A; note 1 220 − − VCE = 2 V; IC = 2 A; note 1 200 − − VCE = 2 V; IC = 3 A; note 1 150 − − IC = 500 mA; IB = 50 mA − − 70 mV IC = 1 A; IB = 50 mA − − 120 mV IC = 2 A; IB = 40 mA; note 1 − − 230 mV IC = 2 A; IB = 200 mA; note 1 − − 210 mV IC = 3 A; IB = 300 mA; note 1 − − 310 mV RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 − 80 105 mΩ VBEsat base-emitter saturation voltage IC = 2 A; IB = 40 mA; note 1 − − 1.1 V IC = 3 A; IB = 300 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A; note 1 1.2 − − V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 35 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 Aug 08 4 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T MLD849 800 MLD850 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 600 (1) 800 (1) (2) 400 (2) (3) 400 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD851 1400 10 102 Base-emitter voltage as a function of collector current; typical values. MLD852 1400 handbook, halfpage 103 104 IC (mA) handbook, halfpage VBEsat VBEsat (mV) (mV) 1000 1000 (1) (1) (2) (2) (3) 600 200 10−1 1 10 102 600 (3) 200 10−1 103 104 IC (mA) 1 IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Aug 08 5 10 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T MLD853 103 handbook, halfpage MLD854 103 handbook, halfpage VCEsat VCEsat (mV) (mV) (1) (2) 102 102 (3) (1) 10 (2) 10 (3) 1 10−1 1 10 102 1 10−1 103 104 IC (mA) 1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLD855 103 handbook, halfpage 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. MLD856 103 handbook, halfpage VCEsat VCEsat (mV) (mV) 102 102 (1) (3) (2) (1) (2) 10 10 (3) 1 10−1 1 10 102 1 10−1 103 104 IC (mA) 1 IC/IB = 50. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 100. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Aug 08 6 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T MLD857 102 handbook, halfpage RCEsat (Ω) 10 1 (1) (2) 10−1 10−2 10−1 (3) 1 10 102 103 104 IC (mΑ) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Equivalent on-resistance as a function of collector current; typical values. 2002 Aug 08 7 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2002 Aug 08 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 8 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Aug 08 9 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T NOTES 2002 Aug 08 10 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T NOTES 2002 Aug 08 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2002 Aug 08 Document order number: 9397 750 09915