ETC ST2600C22R0

Bulletin I25199 rev. B 02/00
ST2600C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
2630A
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
ST2600C..R
Units
2220
A
80
°C
2630
A
55
°C
4800
A
25
°C
@ 50Hz
46000
A
@ 60Hz
48200
A
@ 50Hz
10580
KA2s
@ 60Hz
9640
KA2s
2000 to 3000
V
IT(AV)
@ TC
IT(AV)
@ Ths
IT(RMS)
@ Ths
ITSM
I2t
VDRM /VRRM
tq
typical
400
µs
TJ
max.
125
°C
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1
ST2600C..R Series
Bulletin I25199 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
V DRM/V RRM, max. repetitive
peak and off-state voltage
V
VRSM , maximum nonrepetitive peak voltage
V
20
2000
2100
22
2200
2300
24
2400
2500
26
2600
2700
28
2800
2900
30
3000
3100
ST2600C..R
I DRM /IRRM max.
@ TC = 125°C
mA
250
On-state Conduction
Parameter
ST2600C..R
Max. average on-state current
2220 (1440)
A
80
°C
180° conduction, half sine wave
IT(AV) Max. average on-state current
2630 (1160)
A
double side (single side [anode side]) cooled
@ Heatsink temperature
55 (85)
°C
4800
A
I T(AV)
@ Case temperature
I T(RMS) Max. RMS on-state current
I TSM
DC @ 25°C heatsink temperature double side cooled
46000
t = 10ms
non-repetitive surge current
48200
t = 8.3ms
reapplied
t = 10ms
50% VRRM
Maximum I2t for fusing
A
t = 8.3ms
reapplied
Sinusoidal half wave,
10580
t = 10ms
No voltage
Initial TC = 125°C
t = 8.3ms
reapplied
t = 10ms
50% VRRM
t = 8.3ms
reapplied
6770
2
KA s
6150
V T(TO) Max. value of threshold voltage
0.89
V
TJ = TJ max.
0.19
mΩ
T J = TJ max.
1.45
V
300 (100)
mA
Max. value of on-state slope
resistance
V TM
Max. on-state voltage
IL
Max. (typical) latching current
No voltage
38500
9640
rt
Conditions
Max. peak, one-cycle
36800
I 2t
Units
I = 2900A, TC = 25°C
pk
T J = 25°C, VD = 5V
Switching
Parameter
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
td
Maximum delay time
tq
Typical turn-off time
ST2600C..R
150 (300)
Units Conditions
A/µs
Gate drive 30V, 15Ω, Vd = 67% VDRM, TJ = 25°C
2.0
µs
2
400
From 67% VDRM gate drive 20V, 20Ω, tr = 1µs
TJ = TJ max.
Rise time 0.5µs
IT = 800A, t = 1ms, TJ = TJ max, V RM = 50V,
p
dIRR/dt = 20A/µs, VDR = 67% VDRM, dV/dt = 20V/µs linear
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
Blocking
Parameter
ST2600C..R
Units
Conditions
dv/dt
Maximum linear rate of rise of
off-state voltage
500
V/µs
TJ = TJ max. to 67% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
250
mA
TJ = 125°C rated VDRM /V RRM applied
ST2600C..R
Units
Triggering
Parameter
Conditions
PGM
Maximum peak gate power
150
PG(AV)
Maximum average gate power
10
IGM
Max. peak positive gate current
30
A
VGM
Max. peak positive gate voltage
30
V
Anode positive with respect to cathode
-V GM
Max. peak negative gate voltage
0.25
V
Anode negative with respect to cathode
IGT
Maximum DC gate current
400
mA
TC = 25°C, VDRM = 5V
4
V
TC = 25°C, VDRM = 5V
required to trigger
VGT
Maximum gate voltage required
to trigger
VGD
DC gate voltage not to trigger
t = 100µs
W
p
Anode positive with respect to cathode
0.25
V
TC = 125°C
ST2600C..R
Units
Conditions
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
TJ max. Max. operating temperature
125
T
Max. storage temperature range
RthJ-C
Thermal resistance, junction
0.019
to case
0.0095
stg
Rth(C-h) Thermal resistance, case
to heatsink
F
K/W
0.004
K/W
0.002
Mounting force ± 10%
wt
On-state (conducting)
°C
-55 to 125
Approximate weight
Case style
43000
N
(4400)
(Kg)
1600
g
(R-PUK)
DC operation single side cooled
DC operation double side cooled
Single side cooled
Double side cooled
Clamping force 43KN with
mounting compound
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
180°
0.0010
0.0010
120°
0.0017
0.0017
60°
0.0044
0.0044
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Units
Conditions
TJ = TJ max.
K/W
3
ST2600C..R Series
Bulletin I25199 rev. B 02/00
Ordering Information Table
Device Code
ST 260
1
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
2
0
C
30
R
1
3
4
5
6
7
8
5
-
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6
-
R = Puk Case
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/µsec (Standard selection)
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
3 7.7 (1.5 ) M A X .
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
CATHODE
20° ± 5°
6 .3
2
(0 .
4)
(R-PUK)
All dimensions in millimeters (inches)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
4
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
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ST2600C..R Series
130
ST2600C..R Series
(Single Side Cooled)
R thJ-hs (DC) = 0.023 K/W
120
110
100
90
80
Conduction Angle
70
60
60˚
50
120˚
40
30
180˚
20
0
1000
2000
DC
3000
4000
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Bulletin I25199 rev. B 02/00
130
ST2600C..R Series
(Double Side Cooled)
R thJ-hs (DC) = 0.0115 K/W
120
110
100
90
80
Conduction Angle
70
60˚
60
120˚
50
180˚
40
30
DC
20
0
Average On-state Current (A)
6000
RMS Limit
5000
4000
3000
Conduction Angle
2000
ST2600C..R Series
T J = 125˚C
1000
0
0
1000
2000
3000
4000
5000
Maximum Average On-state Power Loss (W)
7000
3000
4000
5000
Fig. 2 - Current Ratings Characteristics
10000
TJ = 125˚C
1000
ST2600C..R Series
100
0.5
1
1.5
2
2.5
3
Average On-state Current (A)
Average On-state Current (A)
Fig. 3- On-state Power Loss Characteristics
Fig. 4- On-state Power Loss Characteristics
45000
At Any Rated Load Condition And With
50% Rated V RRMApplied Following Surge
Initial T J= 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
40000
35000
30000
25000
20000
15000
ST2600C..R Series
10000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Peak Half Sine Wave On-state Current (A)
DC
180˚
120˚
60˚
8000
2000
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
9000
1000
75000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 125˚C
50% Rated V RRM
Reapplied
70000
65000
60000
55000
50000
45000
40000
ST2600C..R Series
35000
30000
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5
ST2600C..R Series
Bulletin I25199 rev. B 02/00
Total Stroed Charge - Qrr (µC)
10000
IT
T J = 125˚C
dIT
dt
Q rr max.
t
tp = 3ms
Qrr
IRM (REC)
Q rr min.
ST2600C..R Series
1000
1
10
100
Rate Of Decay Of On-state Current - di/dt (A/µs)
Transient Thermal Impedance Z thJ-hs (K/W)
Fig. 7 - Stored Charged
0.1
ST2600C..R Series
0.01
Steady State Value
R thJ-C = 0.019 K/W
(Single Side Cooled)
0.001
R thJ-C = 0.0095 K/W
(Double Side Cooled)
(DC Operation)
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
10
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
VGD
Tj=-40 ˚ C
1
(5)
Tj=25 ˚ C
Tj=125 ˚ C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(6)
(3)
(4)
IGD
Device: ST2600C..R Series
0.1
0.001
0.01
Frequency Limited by PG(AV)
0.1
1
10
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
6
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