Bulletin I25196 rev. B 01/00 ST1200C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 1650A Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters ST1200C..K Units 1650 A 55 °C 3080 A 25 °C @ 50Hz 30500 A @ 60Hz 32000 A @ 50Hz 4651 KA2s @ 60Hz 4250 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 It VDRM /VRRM tq typical TJ www.irf.com 1200 to 2000 V 200 µs - 40 to 125 °C 1 ST1200C..K Series Bulletin I25196 rev.B 01/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 Type number ST1200C..K 100 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST1200C..K 1650 (700) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 3080 I TSM Max. peak, one-cycle 30500 non-repetitive surge current 32000 I 2t 2 Maximum I t for fusing Units Conditions DC @ 25°C heatsink temperature double side cooled t = 10ms reapplied 25700 t = 10ms 100% VRRM 26900 t = 8.3ms reapplied Sinusoidal half wave, 4651 t = 10ms No voltage Initial TJ = TJ max. 4250 t = 8.3ms reapplied KA2s 3000 I 2√ t Maximum I2√t for fusing V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state 46510 High level value of on-state slope resistance t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V (I > π x IT(AV)),TJ = TJ max. 1.01 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max. 0.21 mΩ (I > π x IT(AV) ),TJ = TJ max. 0.19 V TM Max. on-state voltage 1.73 IH Maximum holding current 600 IL Typical latching current 1000 2 KA 2√s 0.91 slope resistance r t2 No voltage t = 8.3ms 3300 A V mA I = 4000A, TJ = TJ max, t = 10ms sine pulse pk p T J = 25°C, anode supply 12V resistive load www.irf.com ST1200C..K Series Bulletin I25196 rev.B 01/00 Switching Parameter di/dt ST1200C..K Max. non-repetitive rate of rise 1000 of turned-on current td Typical delay time Units Conditions A/µs Gate current 1A, di g/dt = 1A/µs 1.9 µs t q Typical turn-off time Gate drive 20V, 20Ω, tr ≤ 1µs TJ = TJ max, anode voltage ≤ 80% VDRM 200 Vd = 0.67% VDRM, T J = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p Blocking Parameter ST1200C..K Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs T J = TJ max. linear to 80% rated V DRM IRRM IDRM Max. peak reverse and off-state leakage current 100 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST1200C..K Maximum peak gate power Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT V TJ = TJ max, tp ≤ 5ms mA T J = 25°C DC gate voltage required DC gate current not to trigger DC gate voltage not to trigger www.irf.com p MAX. 200 - 100 200 50 - 1.4 - 1.1 3.0 0.9 VGD T J = TJ max, t ≤ 5ms T J = - 40°C DC gate current required to trigger IGD A 5.0 TYP. to trigger p T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 3 gate voltage -VGM T J = TJ max, t ≤ 5ms 16 PG(AV) Maximum average gate power IGM Units Conditions T J = 125°C T J = - 40°C V 0.25 T J = 25°C T J = 125°C 10 Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 ST1200C..K Series Bulletin I25196 rev.B 01/00 Thermal and Mechanical Specification Parameter ST1200C..K TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.006 case to heatsink 0.003 Mounting force, ± 10% wt DC operation single side cooled K/W 0.021 RthC-hs Max. thermal resistance, Conditions °C 0.042 junction to heatsink F Units K/W 24500 N (2500) (Kg) Approximate weight 425 g Case style A-24 (K-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side Conduction angle Units 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 120 1 2 0 C 20 K 1 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - K = Puk Case A-24 (K-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST1200C..K Series Bulletin I25196 rev.B 01/00 Outline Table 1 (0.04) MIN. TWO PLACES 47.5 (1.87) DIA. MAX. 2 7. 5 ( 1. 0 8 ) M A X . TWO PLACES PIN RECEPTACLE AMP. 60598-1 67 (2.6) DIA. MAX. 20° ± 5° 7 4 . 5 (2 . 9 ) D I A . M A X . 4.75 (0.2) NOM. 44 (1.73) Case Style A-24 (K-PUK) All dimensions in millimeters (inches) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 130 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 30° 60° 70 90° 60 120° 180° 50 40 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN. 130 120 110 100 90 80 70 60 50 40 30 20 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W Conduction Period 30° 60° 90° 120° 180° 0 400 800 1200 DC 1600 2000 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 ST1200C..K Series ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Angle 80 70 30° 60° 90° 50 120° 40 180° 30 0 4000 400 800 1200 1600 2000 3000 2500 1000 Conduction Angle 500 ST1200C..K Series T J = 125°C 0 400 800 1200 1600 2000 60° 90° 120° 180° 0 DC 600 1200 1800 2400 3000 3600 5000 DC 180° 120° 90° 60° 30° 4000 3000 RMS Limit 2000 Conduction Period 1000 ST1200C..K Series T J = 125°C 0 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 28000 At Any Rated Load Condition And With Rated V R R M Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 26000 24000 22000 20000 18000 16000 14000 ST1200C..K Series 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 30° Average On-state Current (A) 1500 12000 Conduction Period Fig. 4 - Current Ratings Characteristics 2000 0 60 50 40 30 20 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W Average On-state Current (A) 180° 120° 90° 60° 30° RMS Limit 3500 130 120 110 100 90 80 70 Fig. 3 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (°C) 60 Maximum Allowable Heatsink Temperature (°C) 130 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25196 rev. B 01/00 32000 30000 28000 26000 24000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied R a t e d V R R MR e a p p l i e d 22000 20000 18000 16000 14000 12000 0.01 ST1200C..K Series 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST1200C..K Series Bulletin I25196 rev. B 01/00 Instantaneous On-state Current (A) 10000 1000 TJ = 25°C T J = 125°C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs(K/W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 0.01 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) ST1200C..K Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (a ) (b) Tj=-40 °C VGD Tj= 25 °C 1 Tj= 125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) IG D D e v i c e : S T 1 2 0 0 C . . K S e r i e s 0.1 0.001 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7