STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh II MOSFET TYPE STD3NC60 STD3NC60-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 600V 600V < 2.2Ω < 2.2Ω 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD PACKAGE) DESCRIPTION The PowerMESH II is the evolution of the first generation of MESH OVERLAY . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 3 2 1 1 DPAK No Suffix IPAK (Suffix”-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Value Unit Drain-source Voltage (VGS = 0) Parameter 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 3.2 A ID Drain Current (continuos) at TC = 100°C 2 A 12.8 A Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C Peak Diode Recovery voltage slope 3.5 V/ns –65 to 150 °C 150 °C VGS IDM ( ) PTOT dv/dt(1) Tstg Tj Drain Current (pulsed) Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤3.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. August 2002 1/10 STD3NC60 - STD3NC60-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 3.2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 270 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Condition s Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) V GS = ±30V V(BR)DSS Min. Typ. Max. 600 Unit V 1 V DS = Max Rating, TC = 125 °C µA 50 µA ±100 nA ON (1) Symbol Parameter Test Condition s VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance V GS = 10V, ID = 1.5 A Min. Typ. Max. Unit 2 3 4 V 1.8 2.2 Ω Typ. Max. Unit DYNAMIC Symbol g fs (1) 2/10 Parameter Test Condition s Min. Forward Transconductance V DS > ID(on) x RDS(on)max, ID = 2A 3.7 S V DS = 25V, f = 1 MHz, VGS = 0 C iss Input Capacitance 475 pF C oss Output Capacitance 72 pF Crss Reverse Transfer Capacitance 10 pF STD3NC60 - STD3NC60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Condition s Min. VDD = 300V, ID = 2A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 4 A, VGS = 10V Typ. Max. Unit 14 ns 14 ns 16.5 23.1 nC 2.5 nC 9 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. V DD = 480V, ID = 4 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 15 ns 19 ns 24 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Condition s Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3.2A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 3.2 A 12.8 A 1.6 V 600 ns 2.7 µC 9 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STD3NC60 - STD3NC60-1 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD3NC60 - STD3NC60-1 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STD3NC60 - STD3NC60-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD3NC60 - STD3NC60-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.094 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/10 STD3NC60 - STD3NC60-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 8/10 STD3NC60 - STD3NC60-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B C 1.5 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. 6.8 MAX. MIN. MAX. 7 0.267 0.275 B0 B1 10.4 10.6 12.1 0.409 0.417 0.476 D 1.5 1.6 0.059 0.063 A0 D1 1.5 E F 1.65 7.4 1.85 7.6 0.065 0.073 0.291 0.299 K0 P0 2.55 3.9 2.75 4.1 0.100 0.108 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 MAX. 330 inch MIN. MAX. 12.992 13.2 0.059 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 1.574 16.3 0.618 0.641 * on sales type 9/10 STD3NC60 - STD3NC60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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