ETC STGD3NB60KD

STGD3NB60KD
N-CHANNEL 6A - 600V - DPAK
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE
VCES
VCE(sat) (Max)
@25°C
IC(#)
@100°C
STGD3NB60KD
600 V
< 2.8 V
6A
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW GATE CHARGE
OFF LOSSES INCLUDE TAIL CURRENT
HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
LATCH CURRENT FREE OPERATION
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
3
1
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGD3NB60KDT4
GD3NB60KD
DPAK
TAPE & REEL
September 2003
1/10
STGD3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C(#)
10
A
IC
Collector Current (continuous) at TC = 100°C(#)
6
A
Collector Current (pulsed)
24
A
Short Circuit Withstand
10
µs
ICM ()
Tsc
PTOT
Tstg
Tj
Total Dissipation at TC = 25°C
50
W
Derating Factor
0.4
W/°C
–55 to 150
°C
Storage Temperature
Operating Junction Temperature
() Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
2.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
VBR(CES)
ICES
IGES
Parameter
Test Conditions
Min.
Typ.
Max.
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
50
µA
VCE = Max Rating, TC = 125 °C
100
µA
VGE = ±20V , VCE = 0
±100
nA
Max.
Unit
7
V
2.8
V
Gate-Emitter Leakage
Current (VCE = 0)
600
Unit
V
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
2.4
VGE = 15V, IC = 3 A, Tj =125°C
1.9
(#) Calculated according to the iterative formula:
T J MAX – T C
IC ( T C ) = -------------------------------------------------------------------------------------R THJ – C × V CESAT ( MAX )(T C, IC)
2/10
5
V
STGD3NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Test Conditions
Min.
VCE = 25 V , IC =3 A
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 3 A,
VGE = 15V
tscw
Short Circuit Withstand Time
Vce = 0.5 BVces , VGE = 15 V,
Tj = 125°C , RG = 10 Ω
Typ.
Max.
Unit
2.4
S
220
50
5.6
pF
pF
pF
14
3.3
8
19
10
nC
nC
nC
µs
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 3 A
RG = 10Ω , VGE = 15 V
13.5
4.5
ns
ns
Turn-on Current Slope
VCC= 480 V, IC = 7 A, RG=10Ω
VGE = 15 V,Tj = 125°C
500
A/µs
30
µJ
Turn-on Switching Losses
SWITCHING OFF
Symbol
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
tc
Parameter
Cross-over Time
Off Voltage Rise Time
Test Conditions
Min.
Vcc = 480 V, IC =3 A,
RGE = 10 Ω , VGE = 15 V
Typ.
Max.
Unit
86
ns
20
ns
Delay Time
32
ns
Fall Time
85
ns
Turn-off Switching Loss
50
µJ
Total Switching Loss
78
µJ
190
ns
Cross-over Time
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
tr(Voff)
Off Voltage Rise Time
55
ns
td(off)
Delay Time
90
ns
Fall Time
130
ns
Turn-off Switching Loss
110
µJ
Total Switching Loss
140
µJ
tf
Eoff(**)
Ets
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Ifm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.6
1.3
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 1.5 A ,VR = 35 V,
Tj = 125°C, di/dt = 100 A/µs
95
110
2.7
If
trr
Qrr
Irrm
Max.
Unit
1.5
12
A
A
2.1
V
V
ns
nC
A
3/10
STGD3NB60KD
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
4/10
STGD3NB60KD
Collector-Emitter On Voltage vs Collettor Current
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
5/10
STGD3NB60KD
Total Switching Losses vs Temperature
Emitter-collector Diode Characteristics
Total Switching Losses vs Collector Current
Switching Off Safe Operating Area
6/10
STGD3NB60KD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/10
STGD3NB60KD
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
8/10
STGD3NB60KD
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
MIN.
B
1.5
C
12.8
D
20.2
G
16.4
N
50
MAX.
12.992
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
MAX.
12.1
0.476
1.6
0.059 0.063
0.059
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
W
40
15.7
16.3
1.574
0.618
* on sales type
MAX.
330
T
TAPE MECHANICAL DATA
inch
0.641
9/10
STGD3NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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