STGD3NB60KD N-CHANNEL 6A - 600V - DPAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) @25°C IC(#) @100°C STGD3NB60KD 600 V < 2.8 V 6A ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW GATE CHARGE OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGD3NB60KDT4 GD3NB60KD DPAK TAPE & REEL September 2003 1/10 STGD3NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C(#) 10 A IC Collector Current (continuous) at TC = 100°C(#) 6 A Collector Current (pulsed) 24 A Short Circuit Withstand 10 µs ICM () Tsc PTOT Tstg Tj Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C –55 to 150 °C Storage Temperature Operating Junction Temperature () Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Test Conditions Min. Typ. Max. Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit 7 V 2.8 V Gate-Emitter Leakage Current (VCE = 0) 600 Unit V ON (1) Symbol Parameter Test Conditions Min. Typ. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A 2.4 VGE = 15V, IC = 3 A, Tj =125°C 1.9 (#) Calculated according to the iterative formula: T J MAX – T C IC ( T C ) = -------------------------------------------------------------------------------------R THJ – C × V CESAT ( MAX )(T C, IC) 2/10 5 V STGD3NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 25 V , IC =3 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 3 A, VGE = 15V tscw Short Circuit Withstand Time Vce = 0.5 BVces , VGE = 15 V, Tj = 125°C , RG = 10 Ω Typ. Max. Unit 2.4 S 220 50 5.6 pF pF pF 14 3.3 8 19 10 nC nC nC µs SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 10Ω , VGE = 15 V 13.5 4.5 ns ns Turn-on Current Slope VCC= 480 V, IC = 7 A, RG=10Ω VGE = 15 V,Tj = 125°C 500 A/µs 30 µJ Turn-on Switching Losses SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc Parameter Cross-over Time Off Voltage Rise Time Test Conditions Min. Vcc = 480 V, IC =3 A, RGE = 10 Ω , VGE = 15 V Typ. Max. Unit 86 ns 20 ns Delay Time 32 ns Fall Time 85 ns Turn-off Switching Loss 50 µJ Total Switching Loss 78 µJ 190 ns Cross-over Time Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time 55 ns td(off) Delay Time 90 ns Fall Time 130 ns Turn-off Switching Loss 110 µJ Total Switching Loss 140 µJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 1.5 A If = 1.5 A, Tj = 125 °C 1.6 1.3 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A ,VR = 35 V, Tj = 125°C, di/dt = 100 A/µs 95 110 2.7 If trr Qrr Irrm Max. Unit 1.5 12 A A 2.1 V V ns nC A 3/10 STGD3NB60KD Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature 4/10 STGD3NB60KD Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance 5/10 STGD3NB60KD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Total Switching Losses vs Collector Current Switching Off Safe Operating Area 6/10 STGD3NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/10 STGD3NB60KD TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/10 STGD3NB60KD DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. MIN. B 1.5 C 12.8 D 20.2 G 16.4 N 50 MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. 12.1 0.476 1.6 0.059 0.063 0.059 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R W 40 15.7 16.3 1.574 0.618 * on sales type MAX. 330 T TAPE MECHANICAL DATA inch 0.641 9/10 STGD3NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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