STMICROELECTRONICS STGP3NB60KDFP

STGP3NB60KD - STGP3NB60KDFP
STGB3NB60KD
N-CHANNEL 6A - 600V - TO-220/TO-220FP/D2PAK
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
VCES
VCE(sat)
(Max) @ 25°C
IC (#)
@100°C
600 V
600 V
600 V
< 2.8 V
< 2.8 V
< 2.8 V
6A
6A
6A
3
3
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short circuit withstand capability.
1
2
1
2
TO-220FP
TO-220
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP3NB60KD
GP3NB60KD
TO-220
TUBE
STGP3NB60KDFP
GP3NB60KDFP
TO-220FP
TUBE
STGB3NB60KDT4
GB3NB60KD
D2PAK
TAPE & REEL
March 2004
1/12
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TO-220
D2PAK
TO-220FP
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C (#)
10
A
IC
Collector Current (continuous) at TC = 100°C (#)
6
A
ICM ()
PTOT
Collector Current (pulsed)
A
50
25
W
Derating Factor
0.4
0.2
W/°C
VISO
Insulation Withstand Voltage A.C.
Tstg
Storage Temperature
Tj
24
Total Dissipation at TC = 25°C
--
2500
V
– 55 to 150
°C
150
°C
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
TO-220
D2PAK
TO-220FP
2.5
5
°C/W
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
VBR(CES)
Parameter
Test Conditions
Min.
Typ.
Max.
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
500
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
nA
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
7
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tj =125°C
2.8
V
V
2/12
600
Unit
V
5
2.3
1.9
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
SWITCHING PARAMETERS
Symbol
gfs (1)
Parameter
Forward Transconductance
Test Conditions
Min.
VCE = 25V, Ic = 3 A
Typ.
Max.
Unit
2.4
S
220
50
5.8
pF
pF
pF
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 3 A,
VGE = 15V
tscw
Short Circuit Withstand Time
Vce = 0.5 VBR(CES), VGE=15V,
Tj = 125°C , RG = 10 Ω
td(on)
tr
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 3 A
RG = 10Ω, VGE = 15 V
14
5
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 3 A RG=10Ω
VGE = 15 V,Tj = 125°C
520
30
A/µs
µJ
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 25 °C
90
20
33
100
58
85
ns
ns
ns
ns
µJ
µJ
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
190
54
90
130
111
195
ns
ns
ns
ns
µJ
µJ
VCE = 25V, f = 1 MHz, VGE = 0
14
3.3
7.5
18
10
nC
nC
nC
µs
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Ifm
Forward Current
Forward Current Pulsed
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.2
0.95
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A ,VR = 35 V,
Tj =125°C, di/dt = 100A/µs
45
70
2.7
If
trr
Qrr
Irrm
Max.
Unit
3
24
A
A
1.8
V
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula:
T JMAX – T C
I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, IC)
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STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
Output Characteristics
Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/12
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Emitter-collector Diode Characteristics
5/12
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
Turn-Off SOA
Thermal Impedance for TO-220 / D2PAK
6/12
Thermal Impedance for TO-220FP
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/12
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
TO-220 MECHANICAL DATA
DIM.
8/12
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L5
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
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STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
10/12
1
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
0.075 0.082
* on sales type
11/12
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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