STGP3NB60KD - STGP3NB60KDFP STGB3NB60KD N-CHANNEL 6A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP3NB60KD STGP3NB60KDFP STGB3NB60KD VCES VCE(sat) (Max) @ 25°C IC (#) @100°C 600 V 600 V 600 V < 2.8 V < 2.8 V < 2.8 V 6A 6A 6A 3 3 ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. 1 2 1 2 TO-220FP TO-220 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP3NB60KD GP3NB60KD TO-220 TUBE STGP3NB60KDFP GP3NB60KDFP TO-220FP TUBE STGB3NB60KDT4 GB3NB60KD D2PAK TAPE & REEL March 2004 1/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TO-220 D2PAK TO-220FP VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 10 A IC Collector Current (continuous) at TC = 100°C (#) 6 A ICM () PTOT Collector Current (pulsed) A 50 25 W Derating Factor 0.4 0.2 W/°C VISO Insulation Withstand Voltage A.C. Tstg Storage Temperature Tj 24 Total Dissipation at TC = 25°C -- 2500 V – 55 to 150 °C 150 °C Max. Operating Junction Temperature ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max TO-220 D2PAK TO-220FP 2.5 5 °C/W 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS Symbol VBR(CES) Parameter Test Conditions Min. Typ. Max. Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C 50 500 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ±20V , VCE = 0 ±100 nA VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA 7 V VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125°C 2.8 V V 2/12 600 Unit V 5 2.3 1.9 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD SWITCHING PARAMETERS Symbol gfs (1) Parameter Forward Transconductance Test Conditions Min. VCE = 25V, Ic = 3 A Typ. Max. Unit 2.4 S 220 50 5.8 pF pF pF Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 3 A, VGE = 15V tscw Short Circuit Withstand Time Vce = 0.5 VBR(CES), VGE=15V, Tj = 125°C , RG = 10 Ω td(on) tr Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 10Ω, VGE = 15 V 14 5 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C 520 30 A/µs µJ tc tr(Voff) td(off) tf Eoff(**) Ets Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 25 °C 90 20 33 100 58 85 ns ns ns ns µJ µJ tc tr(Voff) td(off) tf Eoff(**) Ets Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C 190 54 90 130 111 195 ns ns ns ns µJ µJ VCE = 25V, f = 1 MHz, VGE = 0 14 3.3 7.5 18 10 nC nC nC µs COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current Pulsed Vf Forward On-Voltage If = 1.5 A If = 1.5 A, Tj = 125 °C 1.2 0.95 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A ,VR = 35 V, Tj =125°C, di/dt = 100A/µs 45 70 2.7 If trr Qrr Irrm Max. Unit 3 24 A A 1.8 V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (**)Losses include Also the Tail (Jedec Standardization) (#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, IC) 3/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Emitter-collector Diode Characteristics 5/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Turn-Off SOA Thermal Impedance for TO-220 / D2PAK 6/12 Thermal Impedance for TO-220FP STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD TO-220 MECHANICAL DATA DIM. 8/12 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 10/12 1 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 0.075 0.082 * on sales type 11/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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