Composite Transistors XN0421L (XN421L) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 ■ Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit VCBO 50 V 50 V IC 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: DI Internal Connection 6 Tr1 5 4 ■ Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 1.45±0.1 3 0.16–0.06 0.95 4 0.1 to 0.3 VCEO Storage temperature 2 0.95 +0.1 UNR121L(UN121L) × 2 elements 5 0.8 +0.2 ■ Basic Part Number of Element ● 1.9±0.1 2.9 –0.05 +0.2 ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 0.65±0.15 1 6 0.5 –0.05 ■ Features 1.5 –0.05 0.3 –0.05 0.65±0.15 1 2 Tr2 3 (Ta=25˚C) Symbol Conditions min VCBO IC = 10µA, IE = 0 50 50 typ max Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 0.1 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 2.0 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ Collector cutoff current Emitter cutoff current Input resistance R1 Resistance ratio R1/R2 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz V µA 20 4.9 V 0.2 V kΩ –30% 4.7 +30% 0.8 1.0 1.2 150 MHz Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN0421L PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.0mA 0.8mA 120 0.6mA 80 0.4mA 40 0.2mA 0 IC/IB=10 10 1 Ta=75˚C 25˚C 0.1 –25˚C 0.01 0 2 4 6 8 10 Collector to emitter voltage VCE 12 3 30 100 Collector current IC 1000 4 3 2 10 1 0.1 1 0 1 3 10 Collector to base voltage 30 100 VCB (V) 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 1 3 10 30 100 300 Collector current IC (mA) VO=0.2V Ta=25˚C f=1MHz IE=0 Ta=25˚C 5 300 (mA) IO — VIN Input voltage VIN (V) Collector output capacitance Cob (pF) 10 100 6 VCE=10V 0 1 (V) Cob — VCB 2 hFE — IC 240 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 100 1000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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