Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6 Features 5˚ 5 1.50+0.25 –0.05 ● 4 0.16+0.10 –0.06 1 (0.65) ■ Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 –0.05 0.50+0.10 –0.05 UNR1210(UN1210) × 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● 1.1+0.2 –0.1 ■ Basic Part Number of Element (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: 8Z Internal Connection 6 Tr1 5 4 ■ Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 1.1+0.3 –0.1 10˚ 1 2 Tr2 3 (Ta=25˚C) Symbol Conditions min VCBO IC = 10µA, IE = 0 50 50 typ max Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Input resistance R1 Collector cutoff current Emitter cutoff current V 0.1 160 460 0.25 V 0.2 V 4.9 V 150 –30% µA 47 MHz +30% kΩ Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN04210 PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 100 Ta=25˚C Collector current IC (mA) 50 40 30 0.4mA 0.5mA 0.6mA 0.7mA 0.3mA 0.1mA 20 10 0 0 2 4 6 8 10 Collector to emitter voltage VCE 12 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 0.3 (V) 1 3 10 10000 30 100 25˚C 200 –25˚C 150 100 50 1 3 3 2 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 250 IO — VIN 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 2 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 0 Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 60 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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