Composite Transistors XN01211 (XN1211) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 ■ Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) × 2 elements ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature (0.65) 0.30+0.10 –0.05 ● 2.8+0.2 –0.3 5 1.50+0.25 –0.05 4 0.4±0.2 ● 3 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.1+0.3 –0.1 ● 5˚ ■ Features 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini5-G1 Pakage Marking Symbol: 9T Internal Connection 5 Tr1 1 4 3 ■ Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 2 (Ta=25˚C) Symbol Conditions min VCBO IC = 10µA, IE = 0 50 50 typ max Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 35 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Collector cutoff current Emitter cutoff current *1 Tr2 Input resistance R1 Resistance ratio R1/R2 V 0.1 µA 0.99 4.9 V 0.2 150 V MHz –30% 10 +30% 0.8 1.0 1.2 kΩ Ratio between 2 elements Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN01211 PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 140 0.7mA 0.6mA 0.5mA 120 100 0.4mA 0.3mA 80 60 0.2mA 40 20 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 Collector to emitter voltage VCE (V) 1 3 10 10000 30 200 25˚C –25˚C 100 1 100 3 3 2 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C IO — VIN 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 2 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 12 hFE — IC 400 Forward current transfer ratio hFE 160 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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