Composite Transistors XN04113 (XN4113) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 ■ Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO –50 V VCEO –50 V IC –100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 6S Internal Connection 6 Tr1 5 4 ■ Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 1.45±0.1 0.5 –0.05 3 0.16–0.06 0.95 4 0.1 to 0.3 Parameter Storage temperature 2 0.95 +0.1 UNR1113(UN1113) × 2 elements 5 0.8 +0.2 ■ Basic Part Number of Element ● 1.9±0.1 2.9 –0.05 +0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 1 2 Tr2 3 (Ta=25˚C) Symbol Conditions min VCBO IC = –10µA, IE = 0 –50 –50 typ max Unit V VCEO IC = –2mA, IB = 0 ICBO VCB = –50V, IE = 0 – 0.1 ICEO VCE = –50V, IB = 0 – 0.5 µA IEBO VEB = –6V, IC = 0 – 0.1 mA Forward current transfer ratio hFE VCE = –10V, IC = –5mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz Collector cutoff current Emitter cutoff current Transition frequency fT Input resistance R1 Resistance ratio R1/R2 V µA 80 –4.9 V – 0.2 80 V MHz –30% 47 +30% 0.8 1.0 1.2 kΩ Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN04113 PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC –100 Collector current IC (mA) Ta=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –120 –0.5mA –100 –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 –0.3 –12 –0.1 –25˚C –0.03 Cob — VCB –10 –10000 –30 25˚C 200 –25˚C 100 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 2 –3 Ta=75˚C 300 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 Ta=75˚C 25˚C –0.01 –0.1 –0.3 0 hFE — IC 400 Forward current transfer ratio hFE IB=–1.0mA –140 Collector to emitter saturation voltage VCE(sat) (V) –160 –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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