ETC XN04113(XN4113)

Composite Transistors
XN04113 (XN4113)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
+0.2
2.8 –0.3
+0.25
■ Absolute Maximum Ratings
+0.1
+0.1
0 to 0.05
0.4±0.2
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
VCBO
–50
V
VCEO
–50
V
IC
–100
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 6S
Internal Connection
6
Tr1
5
4
■ Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
1.45±0.1
0.5 –0.05
3
0.16–0.06
0.95
4
0.1 to 0.3
Parameter
Storage temperature
2
0.95
+0.1
UNR1113(UN1113) × 2 elements
5
0.8
+0.2
■ Basic Part Number of Element
●
1.9±0.1
2.9 –0.05
+0.2
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.1–0.1
●
0.65±0.15
1
6
■ Features
●
1.5 –0.05
0.3 –0.05
0.65±0.15
1
2
Tr2
3
(Ta=25˚C)
Symbol
Conditions
min
VCBO
IC = –10µA, IE = 0
–50
–50
typ
max
Unit
V
VCEO
IC = –2mA, IB = 0
ICBO
VCB = –50V, IE = 0
– 0.1
ICEO
VCE = –50V, IB = 0
– 0.5
µA
IEBO
VEB = –6V, IC = 0
– 0.1
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
Collector cutoff current
Emitter cutoff current
Transition frequency
fT
Input resistance
R1
Resistance ratio
R1/R2
V
µA
80
–4.9
V
– 0.2
80
V
MHz
–30%
47
+30%
0.8
1.0
1.2
kΩ
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN04113
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–120
–0.5mA
–100
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
–0.3
–12
–0.1
–25˚C
–0.03
Cob — VCB
–10
–10000
–30
25˚C
200
–25˚C
100
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
2
–3
Ta=75˚C
300
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–1
VCE=–10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
Ta=75˚C
25˚C
–0.01
–0.1 –0.3
0
hFE — IC
400
Forward current transfer ratio hFE
IB=–1.0mA
–140
Collector to emitter saturation voltage VCE(sat) (V)
–160
–30
–100
VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
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2001 MAR