Ordering number:EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Very small size making it easy to provide highdensity, small-sized hybrid ICs. unit:mm 2038 [2SA1416/2SC3646] E : Emitter C : Collector B : Base ( ) : 2SA1416 SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (–)120 V (–)100 V VEBO IC (–)6 V (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 500 mW Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Moutned on ceramic board (250mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg 1.3 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=(–)5V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA Output Capacitance Cob VCB=(–)10V, f=1MHz Ratings min typ max (–)100 nA (–)100 nA 100* 400* 120 MHz (13) pF 8.5 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage VCE(sat) IC=(–)400mA, IB=(–)40mA VBE(sat) IC=(–)400mA, IB=(–)40mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 Unit pF (–0.2) (–0.6) V 0.1 0.4 V (–)0.85 (–)1.2 V (–)120 V (–)100 V (–)6 V Turn-ON Time ton See specified Test Circuit. (80) ns 80 ns Storage Time tstg See specified Test Circuit. (700) ns 850 ns (40) ns 50 ns Fall Time tf See specified Test Circuit. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/3277KI/N255MW, TS No.2005-1/4 2SA1416/2SC3646 * : The 2SA1416/2SC3646 are classified by 100mA hFE as follows : 100 Marking R 200 140 S 2SA1416 : AB 2SC3646 : CB 280 200 T 400 hFE rank : R, S, T Switching Time Test Circuit (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) No.2005-2/4 2SA1416/2SC3646 No.2005-3/4 2SA1416/2SC3646 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice. PS No.2005-4/4