Ordering number:EN3361 FC140 NPN Epitaxial Planar Silicon Composite Transistor High-Speed Switching Applications Features Package Dimensions · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · Small output capacitance, high gain-bandwidth product. · The FC140 is formed with two chips, being equivalent to the 2SC4452, placed in one package. unit:mm 2074 [FC140] Electrical Connection B1:Base 1 E1:Emitter 1 E2:Emitter 2 C2:Collector 2 B2:Base 2 C1:Collector 1 Specifications SANYO:CP6 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCES VCEO 40 V 15 V VEBO IC 5 200 mA Collector Current (Pulse) ICP 500 mA Base Current 40 mA Collector Dissipation IB PC 200 mW Total Power Dissipation PT 300 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current 1 unit V Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance hFE(small/ large) fT Cob max VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA VCE=1V, IC=10mA VCE=10V, IC=10mA VCB=5V, f=1MHz 90 Unit 0.1 µA 0.1 µA 240 0.6 0.98 450 750 MHz pF IC=10mA, IB=1mA 0.13 0.25 V IC=10mA, IB=1mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ 0.80 0.85 V B-E Saturation Voltage VBE(sat) E-B Breakdown Voltage typ 4.0 VCE(sat) C-E Breakdown Voltage Ratings min 1.4 C-E Saturation Voltage C-B Breakdown Voltage Conditons Turn-ON Time V(BR)EBO ton IE=10µA, IC=0 See specified Test Circuit. Storage Time tstg Turn-OFF Time toff 40 V 15 V 5 V 8.0 ns See specified Test Circuit. 6.0 ns See specified Test Circuit. 12 ns Note:The specifications shown above are for each individual transistor. Marking:140 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4180MO, TS No.3361-1/3 FC140 No.3361-2/3 FC140 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3361-3/3