2SB1474 Transistor Power Transistor (−80V, −4A) 2SB1474 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO -80 -80 V V Emitter-base voltage VEBO -7 -4 -6 V A(DC) W Collector current IC Collector power dissipation PC Junction temperature Tj 1 10 150 Storage temperature Tstg -55~+150 * A ROHM : CPT3 EIAJ : SC-63 5.1 6.5 0.65 C0.5 1.5 0.5 0.8Min. 2.5 9.5 * W (Tc=25˚C) ˚C ˚C Single pulse, Pw=100ms !Packaging specifications and hFE Type 2SB1474 Package hFE CPT3 1k~10k TL 2500 Code Basic ordering unit (pieces) !Equivalent circuit C B R1 R2 E R1 3kΩ R2 300Ω B : Base C : Collector E : Emitter !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVCBO BVCEO -80 -80 - -1 -100 V V µA IC=-50µA IC=-1mA -3 -1.5 mA V VEB=-5V 1000 - 5000 12 45 10000 - MHz pF ICBO IEBO VCE(sat) DC current transfer ratio hFE Transition frequency Output capacitance Cob fT *1 Measured using pulse current. *2 Transition frequency of the device. Conditions VCB=-80V IC/IB=-2A/-4mA VCE/IC=-3V/-2A VCE=-5V, IE=0.5A, f=10MHz VCB=-10V, IE=0A, f=1MHz *1 *1 *2 2.3 0.9 1.5 2.3 5.5 0.9 2.3 (3) (2) (1) Parameter 1.0 0.5 !Absolute maximum ratings (Ta=25°C) 0.75 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. (1) Base (2) Collector (3) Emitter