2SD1759 / 2SD1861 Transistors Power transistor (40V, 2A) 2SD1759 / 2SD1861 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239. 5.1 6.5 0.65 0.5 2.3 1.0 0.5 0.8Min. C0.5 1.5 2.3 0.9 2.3 (3) (2) (1) 1.5 5.5 0.9 !Equivalent circuit C 0.75 2SD1759 2.5 9.5 B RBE (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 4kΩ C : Collector B : Base E : Emitter 2SD1861 E 2.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCER 40 40 V VEBO 5 Collector power dissipation 2SD1759 Junction temperature Storage temperature A(DC) A(Pulse) 3 1 2SD1861 W PC 1 Tj 10 150 −55~+150 Tstg 0.65Max. V(RBE=10kΩ) V 2 IC 1.0 0.5 (1) (2) (3) 2.54 2.54 ∗1 W(TC=25°C) °C °C ROHM : ATV 2SD1861 ATV 1k~ TV2 2500 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 40 40 − − − − Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVEBO 5 ICBO − − − 1000 − − − − 1 Parameter DC current transfer ratio Output capacitance 2SD1759 2SD1861 IEBO VCE(sat) hFE Cob 1000 − 0.45 Taping specifications !Packaging specifications and hFE 2SD1759 CPT3 1k~200k TL 2500 1.05 ∗2 ∗1 Single pulse PW=10ms ∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Type Package hFE Code Basic ordering unit (pieces) 4.4 !Absolute maximum ratings (Ta=25°C) 14.5 0.9 6.8 1 1.5 Unit V V V µA µA V − − 20000 − − 11 − − − pF Conditions IC=50µA IC=1mA , RBE=10kΩ IE=50µA VCB=24V VEB=4V IC/IB=0.6mA/1.2mA VCE/IC=3V/0.5A VCB=10V , IE=0A , f=1MHz (1) Emitter (2) Collector (3) Base