2SD2615 Transistors Power Transistor (120V, 6A) 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ R2 300Ω B : Base C : Collector E : Emitter !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits Unit VCBO VCEO 120 V V V A(DC) VEBO Collector current IC Collector power dissipation PC Junction temperature Storage temperature * Single pulse, Tj Tstg 120 6 6 A(Pulse) 10 2 30 W W(Tc=25°C) 150 −55 ∼ +150 °C °C * Pw=100ms !Packaging specifications and hFE Type 2SD2615 Package hFE Code Basic ordering unit (pieces) TO-220FN 2K∼20K − 500 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 120 − − − − 100 V V Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗1 Measured using pulse current VCE(sat) hFE fT Cob 120 − − − − − − − 2K − 40 − 50 ∗2 Transition frequency of the device. 3 1.5 20K − − µA mA V − MHz pF Conditions IC = 50µA IC = 5mA VCB = 120V VEB = 5V IC/IB = 3A/6mA ∗1 VCE/IC= 3V/2A ∗1 ∗2 VCE = 5V , IE = −0.2A , f = 10MHz VCB = 10V , IE = 0A , f = 1MHz