2SB1183 / 2SB1239 Transistors Power transistor (−40V, −2A) 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861. 5.1 6.5 0.65 0.5 2.3 1.0 0.5 0.8Min. C0.5 1.5 2.3 0.9 2.3 (3) (2) (1) 1.5 5.5 0.9 !Equivalent circuit C 0.75 2SB1183 2.5 9.5 B RBE (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 4kΩ C : Collector B : Base E : Emitter E 2SB1239 2.5 IC Collector current 2SB1183 Collector power dissipation PC 2SB1239 Junction temperature Storage temperature Tj Tstg 0.9 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) W °C °C 1.0 Limits −40 −40 −5 −2 −3 1 10 1 150 −55~+150 Symbol VCBO VCER VEBO Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 0.65Max. 0.5 (1) (2) (3) ∗1 2.54 2.54 ∗2 ROHM : ATV !Packaging specifications and hFE 2SB1183 2SB1239 CPT3 1k~200k TL 2500 ATV 1k~ T146 2500 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCER −40 −40 − − − − Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVEBO −5 − − − 1000 − − − − V IE=−50µA µA µA V VCB=−24V − − −1 −1 −1.5 20000 1000 − 11 − − − pF Parameter DC current transfer ratio Output capacitance 2SB1183 2SB1239 ICBO IEBO VCE(sat) hFE Cob − 1.05 0.45 Taping specifications ∗1 Single pulse Pw=10ms ∗2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger. Type Package hFE Code Basic ordering unit (pieces) 14.5 !Absolute maximum ratings (Ta=25°C) 4.4 6.8 Unit V V − Conditions IC=−50µA IC=−1mA, RBE=10kΩ VEB=−4V IC/IB=−0.6A/−1.2mA VCE/IC=−2V/−0.5A VCB=−10V, IE=0A, f=1MHz (1) Emitter (2) Collector (3) Base